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公开(公告)号：EP4198878A1
公开(公告)日：2023-06-21
申请号：EP22189533.7
申请日：2022-08-09
发明人： CHOI, Jae Seok , CHO, Minsu , KIM, Sanghyun , LEE, Jongmin , KWON, Kinam , SEO, Geonseok , LEE, Hyong Euk
摘要： A method and apparatus for image restoration based on burst images. The method includes generating a plurality of feature representations corresponding to individual images of a burst image set by encoding the individual images (810), determining a reference feature representation from among the plurality of feature representations (820), determining a first comparison pair including the reference feature representation and a first feature representation of the plurality of feature representations (830), generating a first motion-embedding feature representation of the first comparison pair based on a similarity score map of the reference feature representation and the first feature representation (840), generating a fusion result by fusing a plurality of motion-embedding feature representations including the first motion-embedding feature representation (850), and generating at least one restored image by decoding the fusion result (860).
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公开(公告)号：EP4425585A1
公开(公告)日：2024-09-04
申请号：EP24159906.7
申请日：2024-02-27
发明人： JEONG, Juwon , KIM, Sanghyun , YOU, Jiho , CHOI, Sungwoo
CPC分类号： H01L33/46 , H01L33/505 , H01L33/501 , H01L2933/009120130101 , H01L33/44 , H01L33/56 , H01L33/60
摘要： A semiconductor light-emitting device (100, 100A) includes a light emitting structure (110), a wavelength conversion member (120) arranged on an upper surface (110U) of the light emitting structure, the wavelength conversion member including a first surface (120F1) in contact with the light emitting structure, a second surface (120F2) opposite to the first surface, and a sidewall (120S), wherein the first surface entirely covers the upper surface of the light emitting structure, and a portion (120_IS) of the sidewall adjacent to the first surface is slanted with respect to the first surface, and a coating layer (130) arranged on the second surface of the wavelength conversion member, the coating layer including a first material layer (132) and a second material layer (134) alternately stacked on the second surface, wherein the first material layer includes an oxide, and the second material layer includes magnesium fluoride, MgF2, wherein the second material layer (134) is arranged at an uppermost surface (130U) of the coating layer.
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公开(公告)号：EP4415062A1
公开(公告)日：2024-08-14
申请号：EP23218603.1
申请日：2023-12-20
发明人： YOU, Jiho , KIM, Sanghyun , JEONG, Juwon , CHOI, Sungwoo
摘要： A light-emitting device includes: a semiconductor light-emitting structure configured to emit light having a first wavelength; a wavelength conversion layer configured to convert the light which has the first wavelength into light having a second wavelength that is greater than the first wavelength; and a multi-inorganic-film coating layer spaced apart from a light-emitting surface with the wavelength conversion layer therebetween. The multi-inorganic-film coating layer includes a distributed Bragg reflector structure in which first and second inorganic films are alternately stacked, and an uppermost inorganic film farthest from the wavelength conversion layer from among the plurality of inorganic films has a greatest thickness in a first direction perpendicular to the light-emitting surface of the semiconductor light-emitting structure. The first refractive index is selected from a range of about 1.1 to about 1.5, and the second refractive index is selected from a range of about 2.0 to about 3.0.
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公开(公告)号：EP3830682A1
公开(公告)日：2021-06-09
申请号：EP19876177.7
申请日：2019-09-30
发明人： KIM, Kwanmi , KIM, Sanghyun , YANG, Minseok
IPC分类号： G06F3/14 , G06F3/0481 , G06K19/06
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