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1.发明授权METHOD FOR CONTROLLED PROGRAMMING OF NON-VOLATILE MEMORY EXHIBITING BIT LINE COUPLING 有权方法非易失性存储器的编程控制的，HAVING BITLEITUNGSKOPPLUNG的
公开(公告)号：EP1946324B1
公开(公告)日：2010-06-16
申请号：EP06816668.5
申请日：2006-10-11
申请人： SanDisk Corporation
发明人： LUTZE, Jeffrey, W. , LI, Yan , CHAN, Siu, L.
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/12 , G11C16/3427 , G11C16/3454 , G11C2211/5621
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2.发明公开METHOD FOR CONTROLLED PROGRAMMING OF NON-VOLATILE MEMORY EXHIBITING BIT LINE COUPLING 有权方法非易失性存储器的编程控制的，HAVING BITLEITUNGSKOPPLUNG的
公开(公告)号：EP1946324A1
公开(公告)日：2008-07-23
申请号：EP06816668.5
申请日：2006-10-11
申请人： SanDisk Corporation
发明人： LUTZE, Jeffrey, W. , LI, Yan , CHAN, Siu, L.
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/12 , G11C16/3427 , G11C16/3454 , G11C2211/5621
摘要： The effects of bit line-to-bit line coupling in a non-volatile memory are addressed. An inhibit voltage is applied on a bit line (202) of a storage element to be programmed (224) to inhibit programming during a portion of a. program voltage . The inhibit voltage is subsequently removed during the program voltage to allow programming to occur. Due to the proximity of bit lines (202, 204) , the change in the bit line voltage is coupled to a neighboring unselected bit line (204) , reducing the neighboring bit line voltage to a level which might be sufficient to open a select gate and discharge a boost voltage. To prevent this, the select gate voltage (VSGD) is temporarily adjusted during the change in the bit line voltage to ensure that the biasing of the select gate on the unselected bit line is not sufficient to open the select gate .
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