公开(公告)号：EP2718934A1

公开(公告)日：2014-04-16

申请号：EP12726555.1

申请日：2012-05-31

申请人： SanDisk Technologies Inc.

发明人： YUAN, Jiahui ,  DONG, Yingda ,  KWONG, Charles

IPC分类号： G11C11/56 ,  G11C16/34 ,  G11C16/26

CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/3454 ,  G11C16/349 ,  G11C29/021 ,  G11C29/028

摘要： A first read pass voltage is determined and optimized for cycled memory. One or more starting read pass voltages are determined for one or more dies. The system dynamically calculates a current read pass voltage based on the number of program/erase erase cycles, the first read pass voltage and the respective starting read pass voltage. Data is read from one or more non-volatile storage elements using the calculated current read pass voltage.

公开(公告)号：EP4405950A1

公开(公告)日：2024-07-31

申请号：EP22873337.4

申请日：2022-05-09

申请人： SanDisk Technologies, Inc.

发明人： WANG, Ming ,  LI, Liang ,  YUAN, Jiahui

IPC分类号： G11C16/10 ,  G11C16/08 ,  G11C8/14 ,  G11C16/04 ,  H10B41/35 ,  H10B43/27

CPC分类号： G11C16/26 ,  G11C16/0483 ,  G11C16/10 ,  G11C11/5628 ,  G11C11/5642