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    3D SEMICIRCULAR VERTICAL NAND STRING WITH SELF ALIGNED FLOATING GATE OR CHARGE TRAP CELL MEMORY CELLS AND METHODS OF FABRICATING AND OPERATING THE SAME
    3.
    发明公开
    3D SEMICIRCULAR VERTICAL NAND STRING WITH SELF ALIGNED FLOATING GATE OR CHARGE TRAP CELL MEMORY CELLS AND METHODS OF FABRICATING AND OPERATING THE SAME 审中-公开
    具有自对准浮动栅或电荷陷阱电池存储器单元的3D半圆垂直NAND串及其制造和操作方法

    公开(公告)号：EP3189548A1

    公开(公告)日：2017-07-12

    申请号：EP15747918.9

    申请日：2015-07-27

    申请人： SanDisk Technologies LLC

    发明人： KAI, James K. ,  ZHANG, Yanli ,  CHIEN, Henry ,  ALSMEIER, Johann ,  SEROV, Andrey

    IPC分类号： H01L27/115

    摘要： A memory device includes a plurality of memory cells arranged in a string substantially perpendicular to the major surface of the substrate in a plurality of device levels, at least one first select gate electrode located between the major surface of the substrate and the plurality of memory cells, at least one second select gate electrode located above the plurality of memory cells, a semiconductor channel having a portion that extends vertically along a direction perpendicular to the major surface, a first memory film contacting a first side of the semiconductor channel, and a second memory film contacting a second side of the semiconductor channel. The second memory film is electrically isolated from the first memory film, and is located at a same level as the first memory film.

    摘要翻译： 一种存储器件包括多个存储器单元，所述多个存储器单元以多个器件层中基本上垂直于衬底的主表面的方式布置成串，至少一个第一选择栅电极位于衬底的主表面和多个存储器单元之间 至少一个第二选择栅极电极，位于所述多个存储器单元之上;半导体沟道，具有沿垂直于所述主表面的方向垂直延伸的部分;第一存储膜，接触所述半导体沟道的第一侧;以及第二 存储器膜接触半导体沟道的第二侧。 第二存储膜与第一存储膜电隔离，并与第一存储膜位于同一水平面。