公开(公告)号：EP3183748A1

公开(公告)日：2017-06-28

申请号：EP15756514.4

申请日：2015-08-14

申请人： SanDisk Technologies LLC

发明人： MAKALA, Raghuveer ,  ZHANG, Yanli ,  LEE, Yao-Sheng ,  KANAKAMEDALA, Senaka ,  SHARANGPANI, Rahul ,  MATAMIS, George ,  ALSMEIER, Johann ,  SHIMABUKURO, Seiji ,  MIZUNO, Genta ,  TAKEGUCHI, Naoki

IPC分类号： H01L27/115

CPC分类号： H01L27/11556 ,  H01L27/11582

摘要： A method of making a monolithic three dimensional NAND string including providing a stack of alternating first material layers and second material layers over a substrate. The first material layers comprise an insulating material and the second material layers comprise sacrificial layers. The method also includes forming a back side opening in the stack, selectively removing the second material layers through the back side opening to form back side recesses between adjacent first material layers and forming a blocking dielectric (7) inside the back side recesses and the back side opening. The blocking dielectric (7) has a clam shaped regions inside the back side recesses. The method also includes forming a plurality of copper control gate electrodes (3) in the respective clam shell shaped regions of the blocking dielectric in the back side recesses.

摘要翻译： 一种制造单片三维NAND串的方法，包括在衬底上提供交替的第一材料层和第二材料层的叠层。 第一材料层包括绝缘材料并且第二材料层包括牺牲层。 该方法还包括在叠层中形成背面开口，通过背面开口选择性地去除第二材料层以在相邻的第一材料层之间形成背面凹陷，并且在背面凹陷和背面内形成阻挡电介质（7） 侧开口。 阻挡电介质（7）在后侧凹槽内具有蛤形区域。 该方法还包括在后侧凹槽中的阻挡电介质的相应蛤壳形区域中形成多个铜控制栅电极（3）。

公开(公告)号：EP3210242B1

公开(公告)日：2018-10-31

申请号：EP15779097.3

申请日：2015-09-25

申请人： SanDisk Technologies LLC

发明人： KOKA, Sateesh ,  MAKALA, Raghuveer ,  ZHANG, Yanli ,  KANAKAMEDALA, Senaka ,  SHARANGPANI, Rahul ,  LEE, Yao-Sheng ,  MATAMIS, George

IPC分类号： H01L27/115 ,  H01L29/792 ,  H01L29/788 ,  H01L29/66

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： Methods of making monolithic three-dimensional memory devices include performing a first etch to form a memory opening and a second etch using a different etching process to remove a damaged portion of the semiconductor substrate from the bottom of the memory opening. A single crystal semiconductor material is formed over the substrate in the memory opening using an epitaxial growth process. Additional embodiments include improving the quality of the interface between the semiconductor channel material and the underlying semiconductor layers in the memory opening which may be damaged by the bottom opening etch, including forming single crystal semiconductor channel material by epitaxial growth from the bottom surface of the memory opening and/or oxidizing surfaces exposed to the bottom opening etch and removing the oxidized surfaces prior to forming the channel material. Monolithic three-dimensional memory devices formed by the embodiment methods are also disclosed.

公开(公告)号：EP3210242A1

公开(公告)日：2017-08-30

申请号：EP15779097.3

申请日：2015-09-25

申请人： SanDisk Technologies LLC

发明人： KOKA, Sateesh ,  MAKALA, Raghuveer ,  ZHANG, Yanli ,  KANAKAMEDALA, Senaka ,  SHARANGPANI, Rahul ,  LEE, Yao-Sheng ,  MATAMIS, George

IPC分类号： H01L27/115 ,  H01L29/792 ,  H01L29/788 ,  H01L29/66

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： Methods of making monolithic three-dimensional memory devices include performing a first etch to form a memory opening and a second etch using a different etching process to remove a damaged portion of the semiconductor substrate from the bottom of the memory opening. A single crystal semiconductor material is formed over the substrate in the memory opening using an epitaxial growth process. Additional embodiments include improving the quality of the interface between the semiconductor channel material and the underlying semiconductor layers in the memory opening which may be damaged by the bottom opening etch, including forming single crystal semiconductor channel material by epitaxial growth from the bottom surface of the memory opening and/or oxidizing surfaces exposed to the bottom opening etch and removing the oxidized surfaces prior to forming the channel material. Monolithic three-dimensional memory devices formed by the embodiment methods are also disclosed.

摘要翻译： 制造单片三维存储器件的方法包括使用不同的蚀刻工艺执行第一蚀刻以形成存储器开口和第二蚀刻以从存储器开口的底部去除半导体衬底的受损部分。 使用外延生长工艺在存储器开口中的衬底上形成单晶半导体材料。 另外的实施例包括改善半导体沟道材料与存储器开口中的下层半导体层之间的界面的质量，其可能被底部开口蚀刻损坏，包括通过从存储器的底表面外延生长来形成单晶半导体沟道材料 暴露于底部开口的开口和/或氧化表面在形成沟道材料之前蚀刻并去除氧化表面。 还公开了由实施例方法形成的单片三维存储器件。