公开(公告)号：EP3149732B1

公开(公告)日：2018-12-26

申请号：EP15728248.4

申请日：2015-05-14

申请人： SanDisk Technologies LLC

发明人： ELLIS, Robert W. ,  HIGGINS, James M. ,  MOHAN, Vidyabhushan

IPC分类号： G11C5/14 ,  G11C7/22 ,  G11C7/10 ,  G11C11/4076 ,  G11C16/30 ,  G11C16/32 ,  G11C16/34 ,  G06F12/02 ,  G11C16/04 ,  G11C16/10 ,  G11C29/02 ,  G11C29/04

CPC分类号： G11C16/10 ,  G06F12/0246 ,  G11C5/14 ,  G11C7/1042 ,  G11C7/22 ,  G11C11/4076 ,  G11C16/0483 ,  G11C16/30 ,  G11C16/32 ,  G11C16/349 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028 ,  G11C2029/0409 ,  G11C2207/2281 ,  G11C2207/229

摘要： The embodiments described herein are used to execute staggered memory operations. The method includes, at each of a plurality of distinct memory portions of the storage device, establishing a non-zero command delay parameter distinct from a command delay parameter established for one or more of the other memory portions in the plurality of distinct memory portions. The method further includes, after establishing the non-zero command delay parameter in each of the plurality of distinct memory portions of the storage device, executing memory operations in two or more of the plurality of distinct memory portions of the storage device during overlapping time periods, the executing including, in each memory portion of the plurality of memory portions, delaying execution of a respective memory operation by an amount of time corresponding to the command delay parameter established for that memory portion.

公开(公告)号：EP3149732A1

公开(公告)日：2017-04-05

申请号：EP15728248.4

申请日：2015-05-14

申请人： SanDisk Technologies LLC

发明人： ELLIS, Robert W. ,  HIGGINS, James M. ,  MOHAN, Vidyabhushan

IPC分类号： G11C5/14 ,  G11C7/10 ,  G11C7/22 ,  G11C11/4076 ,  G11C16/30 ,  G11C16/32 ,  G11C16/34 ,  G06F12/02

CPC分类号： G11C16/10 ,  G06F12/0246 ,  G11C5/14 ,  G11C7/1042 ,  G11C7/22 ,  G11C11/4076 ,  G11C16/0483 ,  G11C16/30 ,  G11C16/32 ,  G11C16/349 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028 ,  G11C2029/0409 ,  G11C2207/2281 ,  G11C2207/229

摘要： The embodiments described herein are used to execute staggered memory operations. The method includes, at each of a plurality of distinct memory portions of the storage device, establishing a non-zero command delay parameter distinct from a command delay parameter established for one or more of the other memory portions in the plurality of distinct memory portions. The method further includes, after establishing the non-zero command delay parameter in each of the plurality of distinct memory portions of the storage device, executing memory operations in two or more of the plurality of distinct memory portions of the storage device during overlapping time periods, the executing including, in each memory portion of the plurality of memory portions, delaying execution of a respective memory operation by an amount of time corresponding to the command delay parameter established for that memory portion.

摘要翻译： 这里描述的实施例用于执行交错存储器操作。 该方法包括在存储设备的多个不同的存储器部分的每一个处，建立不同于为多个不同存储器部分中的一个或多个其他存储器部分建立的命令延迟参数的非零命令延迟参数。 该方法还包括：在存储设备的多个不同存储器部分的每一个中建立非零命令延迟参数之后，在重叠时间段期间在存储设备的多个不同存储器部分的两个或更多个不同存储器部分中执行存储器操作 执行在多个存储器部分的每个存储器部分中包括延迟相应存储器操作的执行时间对应于为该存储器部分建立的命令延迟参数。