公开(公告)号：EP1695357A2

公开(公告)日：2006-08-30

申请号：EP04817933.7

申请日：2004-12-02

申请人： Sandisk 3D LLC

发明人： CHEN, En-Hsing ,  WALKER, Andrew J. ,  SCHEUERLEIN, Roy E. ,  NALLAMOTHU, Sucheta ,  ILKBAHAR, Alper ,  FASOLI, Luca G.

IPC分类号： G11C16/10 ,  G11C11/56 ,  G11C5/02

CPC分类号： G11C16/10 ,  G11C11/5671 ,  G11C16/0466 ,  G11C16/0483

摘要： An exemplary NAND string memory array provides for capacitive boosting of a half-selected memory cell channel to reduce program disturb effects of the half selected cell. To reduce the effect of leakage current degradation of the boosted level, multiple programming pulses of a shorter duration are employed to limit the time period during which such leakage currents may degrade the voltage within the unselected NAND strings. In addition, multiple series select devices at one or both ends of each NAND string further ensure reduced leakage through such select devices, for both unselected and selected NAND strings.

公开(公告)号：EP1695356A2

公开(公告)日：2006-08-30

申请号：EP04812730.2

申请日：2004-12-02

申请人： Sandisk 3D LLC

发明人： CHEN, En-Hsing ,  WALKER, Andrew J. ,  SCHEUERLEIN, Roy E. ,  NALLAMOTHU, Sucheta ,  ILKBAHAR, Alper ,  FASOLI, Luca G. ,  CLEEVES, James M.

IPC分类号： G11C16/04

CPC分类号： G11C16/0483 ,  G11C8/08 ,  G11C16/08 ,  G11C16/3418 ,  G11C16/3427

摘要： An exemplary NAND string memory array (300) provides for capacitive boosting of a half-selected memory cell channel to reduce program disturb effects of the half selected cell. To reduce the effect of leakage current degradation of the boosted level, multiple series select devices at one or both ends of each NAND string reduce leakage through such select devices, for both unselected and selected NAND strings. An exemplary memory array may include series-connected NAND strings of memory cell transistors having a charge storage dielectric, and includes more than one plane of memory cells (400) formed above a substrate.