公开(公告)号：EP2555242A1

公开(公告)日：2013-02-06

申请号：EP12178617.2

申请日：2012-07-31

申请人： Selex Sistemi Integrati S.p.A.

发明人： Chini, Alessandro ,  Lanzieri, Claudio

IPC分类号： H01L27/088 ,  H01L27/06 ,  H01L21/8252

CPC分类号： H01L27/0605 ,  H01L21/8252 ,  H01L27/0883 ,  H01L27/095 ,  H01L29/66545

摘要： The present invention concerns a layered epitaxial structure for enhancement/depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/depletion PHEMT device that finds advantageous, but not exclusive, application in the manufacturing of integrated circuits operating at millimetre-wave and microwave frequencies.

摘要翻译： 本发明涉及用于增强/消耗PHEMT器件的分层外延结构，增强/消耗PHEMT器件和用于制造增强/耗尽PHEMT器件的方法，其在制造以毫米为单位的集成电路的制造中发现有利但非排他的应用 波和微波频率。