公开(公告)号：EP2544367A3

公开(公告)日：2013-04-17

申请号：EP12171149.3

申请日：2012-06-07

申请人： Semiconductor Components Industries, LLC

发明人： Onishi, Akinobu ,  Hinokuma, Yasuhiro ,  Kobayashi, Kazuyuki ,  Murase, Kengo

IPC分类号： H03F3/45

CPC分类号： H03F3/45188

摘要： A semiconductor integrated circuit that is efficiently reduced in a noise level is offered. P-channel type MOS transistors M1 and M2 serving as differential input transistors have a thin gate oxide film in order to reduce the noise level. A protection circuit to protect the P-channel type MOS transistors M1 and M2 from overvoltage is formed including P-channel type MOS transistors M3 and M4. The P-channel type MOS transistor M3 is a first protection transistor to protect the P-channel type MOS transistor M1 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M1. The P-channel type MOS transistor M4 is a second protection transistor to protect the P-channel type MOS transistor M2 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M2.

摘要翻译： 提供有效降低噪声水平的半导体集成电路。 用作差分输入晶体管的P沟道型MOS晶体管M1和M2具有薄的栅氧化膜，以降低噪声水平。 形成包括P沟道型MOS晶体管M3和M4的保护P沟道型MOS晶体管M1和M2免于过电压的保护电路。 P沟道型MOS晶体管M3是用于保护P沟道型MOS晶体管M1免于过电压的第一保护晶体管，并且连接到P沟道型MOS晶体管M1的漏极。 P沟道型MOS晶体管M4是用于保护P沟道型MOS晶体管M2免于过电压的第二保护晶体管，并且连接到P沟道型MOS晶体管M2的漏极。

公开(公告)号：EP2544367A2

公开(公告)日：2013-01-09

申请号：EP12171149.3

申请日：2012-06-07

申请人： Semiconductor Components Industries, LLC

发明人： Onishi, Akinobu ,  Hinokuma, Yasuhiro ,  Kobayashi, Kazuyuki ,  Murase, Kengo

IPC分类号： H03F3/45

CPC分类号： H03F3/45188

摘要： A semiconductor integrated circuit that is efficiently reduced in a noise level is offered. P-channel type MOS transistors M1 and M2 serving as differential input transistors have a thin gate oxide film in order to reduce the noise level. A protection circuit to protect the P-channel type MOS transistors M1 and M2 from overvoltage is formed including P-channel type MOS transistors M3 and M4. The P-channel type MOS transistor M3 is a first protection transistor to protect the P-channel type MOS transistor M1 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M1. The P-channel type MOS transistor M4 is a second protection transistor to protect the P-channel type MOS transistor M2 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M2.

摘要翻译： 提供了可以有效降低噪声水平的半导体集成电路。 作为差分输入晶体管的P沟道型MOS晶体管M1和M2具有薄的栅极氧化膜，以便降低噪声水平。 形成保护P沟道型MOS晶体管M1和M2免受过电压的保护电路，包括P沟道型MOS晶体管M3和M4。 P沟道型MOS晶体管M3是用于保护P沟道型MOS晶体管M1免受过电压的第一保护晶体管，并连接到P沟道型MOS晶体管M1的漏极。 P沟道型MOS晶体管M4是用于保护P沟道型MOS晶体管M2免受过电压的第二保护晶体管，并且连接到P沟道型MOS晶体管M2的漏极。