公开(公告)号：EP1041641B1

公开(公告)日：2015-11-04

申请号：EP00105608.4

申请日：2000-03-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yamazaki, Shunpei, c/o Semiconductor Energy ,  Koyama, Jun, Semiconductor Energy Labor. Co., Ltd.

IPC分类号： G02F1/1345 ,  H01L29/49 ,  H01L27/12 ,  G02F1/1362

CPC分类号： G02F1/1368 ,  G02F1/13454 ,  G02F1/136213 ,  H01L27/1222 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1041641A2

公开(公告)日：2000-10-04

申请号：EP00105608.4

申请日：2000-03-16

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei, c/o Semiconductor Energy ,  Koyama, Jun, Semiconductor Energy Labor. Co., Ltd.

IPC分类号： H01L29/786 ,  G02F1/1368 ,  G02F1/1362 ,  H05B33/12

CPC分类号： G02F1/1368 ,  G02F1/13454 ,  G02F1/136213 ,  H01L27/1222 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to provide an electrooptical device having high operation performance and reliability, and a method of manufacturing the electrooptical device.
Lov region 207 is disposed in n-channel TFT 302 that comprises a driver circuit, and a TFT structure which is resistant to hot carriers is realized. Loff regions 217 to 220 are disposed in n-channel TFT 304 that comprises a pixel section, and a TFT structure of low off current is realized. An input-output signal wiring 305 and gate wiring 306 are formed by laminating a first wiring and a second wiring having lower resistivity than the first wiring, and wiring resistivity is steeply reduced.