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公开(公告)号：EP0735597B1
公开(公告)日：2002-02-13
申请号：EP96105098.6
申请日：1996-03-29
发明人： Hisamatsu, Tadashi
IPC分类号： H01L31/068 , H01L31/0288 , H01L31/18
CPC分类号： H01L31/0288 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
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2.发明授权Solar cell with bypass function and multi-junction stacked type solar cell with bypass function, and method for manufacturing these devices 有权具有转发功能的太阳能电池和许多具有太阳能电池与这些设备的类型转发功能和制备方法转变
公开(公告)号：EP1094521B1
公开(公告)日：2009-02-25
申请号：EP00122641.4
申请日：2000-10-17
IPC分类号： H01L27/142 , H01L31/18 , H01L31/068
CPC分类号： H01L27/1421 , H01L31/0687 , Y02E10/544 , Y02P70/521
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公开(公告)号：EP1231648B1
公开(公告)日：2006-10-04
申请号：EP02076531.9
申请日：1996-06-05
IPC分类号： H01L31/075 , H01L31/0312 , H01L31/072 , H01L31/052 , H01L31/18
CPC分类号： H01L31/077 , H01L31/06 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
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4.发明公开Solar cell with bypass function and multi-junction stacked type solar cell with bypass function, and method for manufacturing these devices 有权具有转发功能的太阳能电池和许多具有太阳能电池与这些设备的类型转发功能和制备方法转变
公开(公告)号：EP1094521A3
公开(公告)日：2004-05-12
申请号：EP00122641.4
申请日：2000-10-17
IPC分类号： H01L27/142 , H01L31/18 , H01L31/068
CPC分类号： H01L27/1421 , H01L31/0687 , Y02E10/544 , Y02P70/521
摘要： In this bypass-function added solar cell, a plurality of island-like p + regions (3), which is third regions, are formed at a boundary between a p-type region (1) and an n-type region layer (2) constituting a substrate (10) so that the p + regions project into the region (1) and the region (2) and are separated away from the surface of the substrate (10). Therefore, in this solar cell, unlike prior art counterparts, the insulating film for isolating the p + regions (3) and the n electrodes (7) constituting the np + diode from one another is no longer necessary, thus allowing a reduction in manufacturing cost. As a result, a bypass-function added solar cell with a bypass-diode function added thereto can be provided with low cost and by simple process.
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公开(公告)号：EP1231648A2
公开(公告)日：2002-08-14
申请号：EP02076531.9
申请日：1996-06-05
IPC分类号： H01L31/072 , H01L31/18 , H01L31/052
CPC分类号： H01L31/077 , H01L31/06 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
摘要： A solar cell comprises a crystalline Si substrate (1) of first type conductivity; a diffusion layer (2) of second type conductivity formed on a first main surface side of said substrate;
an Si 1-x Ge x (0 1-x Ge x alloy layer. The intermediate semiconductor layer has an intermediate refractive index smaller than that of Si and has an energy bandgap larger than the energy bandgap of said Si 1-x Ge x .-
6.发明公开
公开(公告)号：EP0747972A3
公开(公告)日：1997-11-19
申请号：EP96304097.7
申请日：1996-06-05
IPC分类号： H01L31/075 , H01L31/0312
CPC分类号： H01L31/077 , H01L31/06 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes an n type diffusion layer (2) formed on a first main surface side of a p - type monocrystalline Si substrate (1), and a p + type semiconductor layer (4) formed on a second main surface side of substrate (1) and having an energy bandgap narrower than that of Si and an impurity concentration higher than that of substrate (1).
摘要翻译： 太阳能电池包括第一类导电性的晶体Si衬底（1） 形成在所述基板的第一主表面侧的第二导电型扩散层（2）; 形成在所述基板的第二主表面侧上的Si1-xGex（0
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公开(公告)号：EP0537781A1
公开(公告)日：1993-04-21
申请号：EP92117751.5
申请日：1992-10-16
IPC分类号： H01L31/068 , H01L31/0352
CPC分类号： H01L31/0693 , H01L31/03529 , H01L31/0443 , H01L31/068 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a first semiconductor region (1) of a P type, a second semiconductor region (2) of an N type made in contact with the first semiconductor region (1) so as to form a PN junction, and a third semiconductor region (4) of a P⁺ type made in contact with both the first and second semiconductor regions (1, 2) and having a higher impurity concentration than that of the first semiconductor region (1).
摘要翻译： 太阳能电池包括P型的第一半导体区域（1），与第一半导体区域（1）接触以形成PN结的N型第二半导体区域（2），以及第三半导体区域 与第一和第二半导体区域（1,2）接触并且具有比第一半导体区域（1）的杂质浓度更高的杂质浓度的P＆copy＆类型的区域（4）。
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8.发明公开
公开(公告)号：EP0735597A3
公开(公告)日：1997-06-04
申请号：EP96105098.6
申请日：1996-03-29
发明人： Hisamatsu, Tadashi
IPC分类号： H01L31/068 , H01L31/0288
CPC分类号： H01L31/0288 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A silicon solar cell includes a p type silicon substrate (1), an n type diffusion layer (2) formed at a first main surface side of the substrate, and a p + layer (3a) of high doping concentration formed at a second main surface side of the substrate (1) by ion-implantation of group III element having an atomic radius greater than that of a Si atom. Aℓ is preferably used as the group III element.
摘要翻译： 硅太阳电池包括p型硅衬底（1），形成在衬底的第一主表面侧的n型扩散层（2）和在第二主体处形成的高掺杂浓度的p +层（3a） 通过离子注入原子半径大于Si原子的III族元素的衬底（1）的表面侧。 优选使用A 1作为III族元素。
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公开(公告)号：EP0537781B1
公开(公告)日：1996-12-18
申请号：EP92117751.5
申请日：1992-10-16
IPC分类号： H01L31/068 , H01L31/0352
CPC分类号： H01L31/0693 , H01L31/03529 , H01L31/0443 , H01L31/068 , Y02E10/544 , Y02E10/547 , Y02P70/521
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10.发明公开
公开(公告)号：EP0747972A2
公开(公告)日：1996-12-11
申请号：EP96304097.7
申请日：1996-06-05
IPC分类号： H01L31/075 , H01L31/0312
CPC分类号： H01L31/077 , H01L31/06 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes an n type diffusion layer (2) formed on a first main surface side of a p - type monocrystalline Si substrate (1), and a p + type semiconductor layer (4) formed on a second main surface side of substrate (1) and having an energy bandgap narrower than that of Si and an impurity concentration higher than that of substrate (1).
摘要翻译： 太阳能电池包括形成在p型单晶Si衬底（1）的第一主表面侧上的n型扩散层（2）和形成在第二主表面侧上的ap +型半导体层（4） 的衬底（1），并且具有比Si的能带隙窄的杂质浓度和比衬底（1）高的杂质浓度。
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