公开(公告)号：EP1953832A2

公开(公告)日：2008-08-06

申请号：EP08001549.8

申请日：2008-01-28

申请人： Sharp Kabushiki Kaisha

发明人： Nasanu, Yoshiyuki ,  Ishikawa, Yasuaki ,  Nakano, Takanori

IPC分类号： H01L31/075

CPC分类号： H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×10 16 to 2.0×10 17 cm -3 .

摘要翻译： 光电转换装置包括依次堆叠的由硅基半导体制成的p型层，i型层和n型层，其中i型层含有浓度为n 1.0×10 16〜2.0×10 17 cm -3。

公开(公告)号：EP1953831A2

公开(公告)日：2008-08-06

申请号：EP08001050.7

申请日：2008-01-21

申请人： Sharp Kabushiki Kaisha

发明人： Nasuno, Yoshiyuki ,  Ishikawa, Yasuaki ,  Nakano, Takanori

IPC分类号： H01L31/075

CPC分类号： H01L31/076 ,  C23C16/24 ,  C23C16/325 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/5096 ,  C30B25/105 ,  C30B25/165 ,  C30B29/06 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A stacked photoelectric conversion device includes a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer each having a p-i-n junction and made of a silicon base semiconductor, stacked in this order from a light entrance side, wherein the first and the second photoelectric conversion layers have an i-type amorphous layer made of an amorphous silicon base semiconductor, respectively, and the third photoelectric conversion layer has an i-type microcrystalline layer made of a microcrystalline silicon base semiconductor.

摘要翻译： 堆叠式光电转换装置包括从光入射侧依次堆叠的具有pin接点并由硅基半导体制成的第一光电转换层，第二光电转换层和第三光电转换层，其中，第一和 第二光电转换层分别具有由非晶硅基半导体构成的i型非晶层，第三光电转换层具有由微晶硅基半导体构成的i型微晶层。

公开(公告)号：EP1953832A3

公开(公告)日：2014-07-02

申请号：EP08001549.8

申请日：2008-01-28

申请人： Sharp Kabushiki Kaisha

发明人： Nasanu, Yoshiyuki ,  Ishikawa, Yasuaki ,  Nakano, Takanori

IPC分类号： H01L31/075 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×10 16 to 2.0×10 17 cm -3 .

公开(公告)号：EP1953831A3

公开(公告)日：2014-01-15

申请号：EP08001050.7

申请日：2008-01-21

申请人： Sharp Kabushiki Kaisha

发明人： Nasuno, Yoshiyuki ,  Ishikawa, Yasuaki ,  Nakano, Takanori

IPC分类号： H01L31/075 ,  H01L31/18 ,  C23C16/505 ,  C23C16/455 ,  C30B25/16 ,  C30B29/06

CPC分类号： H01L31/076 ,  C23C16/24 ,  C23C16/325 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/5096 ,  C30B25/105 ,  C30B25/165 ,  C30B29/06 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A stacked photoelectric conversion device includes a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer each having a p-i-n junction and made of a silicon base semiconductor, stacked in this order from a light entrance side, wherein the first and the second photoelectric conversion layers have an i-type amorphous layer made of an amorphous silicon base semiconductor, respectively, and the third photoelectric conversion layer has an i-type microcrystalline layer made of a microcrystalline silicon base semiconductor.