公开(公告)号：EP2931935B1

公开(公告)日：2018-10-24

申请号：EP13799087.5

申请日：2013-12-04

申请人： Element Six Technologies Limited

发明人： PICKLES, Charles Simon James ,  WORT, Christopher ,  BRANDON, John ,  PERKINS, Neil

IPC分类号： C23C16/27 ,  C30B25/10 ,  C30B29/04 ,  C23C16/511 ,  C30B25/12 ,  C30B25/16

CPC分类号： C23C16/274 ,  C23C16/511 ,  C30B25/105 ,  C30B25/12 ,  C30B25/165 ,  C30B29/04

摘要： A method of coating a non-refractory and/or non-planar substrate 2 with synthetic diamond material using a microwave plasma chemical vapour deposition (MWCVD) synthesis technique is described. The method details forming a composite substrate assembly comprising: a support substrate 2 with an upper surface 4 and one or more electrically conductive refractory guards 6 disposed over the upper surface 4 of the support substrate 2, extending to a height hg above the upper surface 4 of the support substrate 2; and one or more non-refractory and/or non-planar substrates 8 disposed over the upper surface 4 of the support substrate 2, wherein the height hs above the upper surface 4 of the support substrate 2, where the height hs and where the difference in height hg hs lies in the range of 0.2-10mm. The composite substrate assembly is located within a plasma chamber of the microwave plasma CVD reactor (Figure 5). The process gases are fed into the plasma chamber with microwave plasma where plasma is formed at a location over the composite substrate assembly thus growing synthetic diamond on the one or more non-refractory and/or non-planar substrates.

公开(公告)号：EP2656374B1

公开(公告)日：2018-02-21

申请号：EP11802042.9

申请日：2011-12-14

申请人： Element Six Technologies Limited

发明人： COE, Steven Edward ,  WILMAN, Jonathan James ,  TWITCHEN, Daniel James ,  SCARSBROOK, Geoffrey Alan ,  BRANDON, John Robert ,  WORT, Christopher John Howard ,  MARKHAM, Matthew Lee

IPC分类号： H01J37/32 ,  C30B29/04 ,  C30B25/02 ,  C23C16/27

CPC分类号： C30B25/14 ,  C01B32/25 ,  C23C16/274 ,  C23C16/278 ,  C30B25/02 ,  C30B25/165 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32449

摘要： Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm3 per minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.

公开(公告)号：EP3112504A4

公开(公告)日：2018-01-03

申请号：EP15755325

申请日：2015-02-27

申请人： NIPPON STEEL & SUMITOMO METAL CORP

发明人： AIGO TAKASHI ,  ITO WATARU ,  FUJIMOTO TATSUO

IPC分类号： C30B29/36 ,  C30B25/02

CPC分类号： C30B25/20 ,  C23C16/325 ,  C23C16/44 ,  C30B25/08 ,  C30B25/10 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02661

摘要： The present invention provides a method for producing an epitaxial silicon carbide wafer comprising epitaxially growing SiC on an SiC substrate to produce an epitaxial SiC wafer during which further reducing stacking faults and comet defects than the conventional technologies to obtain an epitaxial SiC wafer having a high quality epitaxial film. The method for producing the epitaxial silicon carbide wafer is characterized in that a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and the hydrogen gas is contained in 0.1 to 10.0 vol% with respect to the inert gas.

公开(公告)号：EP3054037A4

公开(公告)日：2017-06-21

申请号：EP14849461

申请日：2014-09-18

申请人： TAMURA SEISAKUSHO KK ,  NAT UNIV CORP TOKYO UNIV OF AGRICULTURE AND TECH

发明人： GOTO KEN ,  SASAKI KOHEI ,  KOUKITU AKINORI ,  KUMAGAI YOSHINAO ,  MURAKAMI HISASHI

IPC分类号： H01L21/365 ,  C23C16/40 ,  C23C16/448 ,  C30B25/16 ,  C30B29/16

CPC分类号： C30B25/165 ,  C23C16/40 ,  C23C16/4488 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/24

摘要： Provided are: a method for efficiently growing a high-quality, large diameter ²-Ga 2 O 3 -based single crystal film; and a crystalline layered structure having a ²-Ga 2 O 3 -based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a ²-Ga 2 O 3 -based single crystal film by using the HVPE method, and including a step for exposing a Ga 2 O 3 -based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a ²-Ga 2 O 3 -based single crystal film (12) on the principal surface (11) of the Ga 2 O 3 -based substrate (10) at a growing temperature of 900° C or higher.

摘要翻译： 提供了：一种有效地生长高质量，大直径的基于Ga 2 O 3的单晶膜的方法; 以及使用该生长方法生长的具有基于Ga 2 O 3的单晶膜的结晶层状结构。 作为一个实施例，本发明提供了一种通过使用HVPE法生长基于Ga 2 O 3的单晶膜的方法，并且包括将Ga 2 O 3基衬底（10）暴露于镓 氯化物气体和含氧气体，并且在Ga 2 O 3基衬底（10）的主表面（11）上在生长温度下生长基于Ga 2 O 3的单晶膜（12） 900°C或更高。

公开(公告)号：EP2396449B1

公开(公告)日：2015-08-05

申请号：EP10740845.2

申请日：2010-02-12

申请人： Gallium Enterprises Pty Ltd

发明人： REYNOLDS, Guy James ,  MARTIN, Conor Nicholas ,  GLOWACKI, Piotr ,  WINTREBERT EP FOUQUET, Marie-Pierre Francoise ,  BARIK, Satyanarayan ,  CHEN, Patrick Po-Tsang

IPC分类号： C23C16/30 ,  C23C16/452 ,  C23C16/455 ,  H01J37/32 ,  C30B29/40 ,  H01L21/02

CPC分类号： H01J37/32449 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45523 ,  C30B25/105 ,  C30B25/165 ,  C30B29/403 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0262 ,  Y10T137/8593

公开(公告)号：EP2837020A1

公开(公告)日：2015-02-18

申请号：EP14721146.0

申请日：2014-03-15

申请人： Dow Corning Corporation

发明人： LOBODA, Mark, J. ,  ZHANG, Jie

IPC分类号： H01L21/20 ,  C30B25/10 ,  C30B25/20 ,  C30B29/36

CPC分类号： H01L21/02529 ,  C23C16/325 ,  C23C16/4404 ,  C23C16/45502 ,  C30B25/10 ,  C30B25/165 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L22/26 ,  H01L29/1608

摘要： A method of forming an epitaxial SiC film on SiC substrates in a warm wall CVD system, wherein the susceptor is actively heated and the ceiling and sidewall are not actively heated, but are allowed to be indirectly heated by the susceptor. The method includes a first process of reaction cell preparation and a second process of epitaxial film growth. The epitaxial growth is performed by flowing parallel to the surface of the wafers a gas mixture of hydrogen, silicon and carbon gases, at total gas velocity in a range 120 to 250 cm/sec.

摘要翻译： 一种在温壁CVD系统中在SiC衬底上形成外延SiC膜的方法，其中感受器被主动加热，并且天花板和侧壁不被主动加热，而是被基座间接加热。 该方法包括反应池制备的第一过程和外延膜生长的第二过程。 通过平行于晶片的表面流动氢气，硅和碳气体的气体混合物，以120-250cm / sec的总气体流速进行外延生长。

公开(公告)号：EP2831315A1

公开(公告)日：2015-02-04

申请号：EP13714993.6

申请日：2013-03-28

申请人： Isis Innovation Limited

发明人： GROBERT, Nicole ,  MURDOCK, Adrian Timothy ,  KOÓS, Antal Adolf

IPC分类号： C30B25/16 ,  C01B31/04 ,  B82Y40/00 ,  C23C16/26 ,  C30B25/18 ,  C30B29/02

CPC分类号： C01B31/0461 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/182 ,  C01B32/186 ,  C01B32/188 ,  C01B2204/02 ,  C01B2204/04 ,  C01P2004/20 ,  C23C16/26 ,  C30B25/165 ,  C30B25/186 ,  C30B29/02

摘要： The present invention provides a process for producing a two-dimensional nanomaterial by chemical vapour deposition (CVD), the process comprising contacting a substrate in a reaction chamber with a first flow which contains hydrogen and a second flow which contains a precursor for said material, wherein the contacting takes place under conditions such that the precursor reacts in the chamber to form said material on a surface of the substrate, wherein the ratio of the flow rate of the first flow to the flow rate of the second flow is at least 5:1. Two-dimensional nanomaterials obtainable by said process are also provided, as well as devices comprising said nanomaterials.

公开(公告)号：EP2331725B1

公开(公告)日：2014-11-26

申请号：EP09748564.3

申请日：2009-10-05

申请人： Sierra Solar Power, Inc.

发明人： POPPE, Steve ,  ROZENZON, Yan ,  CHEN, David Z. ,  YAN, Xiaole ,  DING, Peijun ,  XU, Zheng

IPC分类号： C23C16/455 ,  C23C16/48 ,  C23C16/44 ,  C30B25/10 ,  C30B25/16 ,  C30B25/12 ,  C30B25/14 ,  C23C16/458

CPC分类号： C23C16/4408 ,  C23C16/455 ,  C23C16/4587 ,  C23C16/481 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B25/165

公开(公告)号：EP2038456B1

公开(公告)日：2014-03-05

申请号：EP07812070.6

申请日：2007-06-08

申请人： Soitec

发明人： ARENA, Chantal ,  WERKHOVEN, Christiaan ,  STEIDL, Thomas, Andrew ,  BIRTCHER, Charles, Michael ,  CLARK, Robert, Daniel

IPC分类号： C30B29/40 ,  C30B25/16 ,  C30B25/02

CPC分类号： C30B29/40 ,  C30B25/02 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406

公开(公告)号：EP1953831A3

公开(公告)日：2014-01-15

申请号：EP08001050.7

申请日：2008-01-21

申请人： Sharp Kabushiki Kaisha

发明人： Nasuno, Yoshiyuki ,  Ishikawa, Yasuaki ,  Nakano, Takanori

IPC分类号： H01L31/075 ,  H01L31/18 ,  C23C16/505 ,  C23C16/455 ,  C30B25/16 ,  C30B29/06

CPC分类号： H01L31/076 ,  C23C16/24 ,  C23C16/325 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/5096 ,  C30B25/105 ,  C30B25/165 ,  C30B29/06 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A stacked photoelectric conversion device includes a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer each having a p-i-n junction and made of a silicon base semiconductor, stacked in this order from a light entrance side, wherein the first and the second photoelectric conversion layers have an i-type amorphous layer made of an amorphous silicon base semiconductor, respectively, and the third photoelectric conversion layer has an i-type microcrystalline layer made of a microcrystalline silicon base semiconductor.