公开(公告)号：EP2721651A1

公开(公告)日：2014-04-23

申请号：EP12800673.1

申请日：2012-06-15

Applicant: Shenzhen BYD Auto R&D Company Limited ,  BYD Company Limited

Inventor： CHEN, Wanshi ,  ZHANG, Wang

IPC: H01L33/00

CPC classification number: H01L33/42 ,  C23C14/086 ,  C23C14/30 ,  H01L21/02104 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L33/22 ,  H01L2251/308 ,  H01L2933/0016

Abstract: A method for forming a current diffusion layer in a semiconductor light emitting device comprises steps of: heating and evaporating an ITO source on an epitaxial wafer by a direct current electron gun to form an ITO layer (16); after a part of the ITO layer (16) which accounts for 85%-90% of the thickness of the ITO layer (16) is deposited, heating and evaporating a doped ZnO source by a pulse current electron gun, and controlling a duty ratio of the pulse current of the pulse current electron gun to deposit a discontinuously arranged doped ZnO layer (17) on the part of the ITO layer (16) during the process of depositing the ITO layer (16); and further heating and evaporating the ITO source by the direct current electron gun to continue depositing a continuously deposited ITO layer (16) which buries the doped ZnO layer (17). Further, a method for fabricating a semiconductor light emitting device is also provided.

公开(公告)号：EP2721651B1

公开(公告)日：2018-04-04

申请号：EP12800673.1

申请日：2012-06-15

Applicant: Shenzhen BYD Auto R&D Company Limited ,  BYD Company Limited

Inventor： CHEN, Wanshi ,  ZHANG, Wang

IPC: H01L33/42 ,  H01L33/22 ,  C23C14/08 ,  C23C14/30

CPC classification number: H01L33/42 ,  C23C14/086 ,  C23C14/30 ,  H01L21/02104 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L33/22 ,  H01L2251/308 ,  H01L2933/0016

Abstract: A method of forming a current diffusion layer is provided that comprises providing an epitaxial wafer. The method further comprises depositing ITO source material on the epitaxial wafer to form a base ITO layer by a direct current electron gun and depositing ZnO source material, during simultaneous deposition of the ITO source material, on the base ITO layer to form a ZnO doped ITO layer by a pulse current electron gun. The ZnO source material is deposited at a deposition rate higher than the rate at which the ITO source material is deposited. Generation and termination of current may be controlled by adjusting a duty cycle of pulse current provided by the pulse current electron gun and result in discontinuous deposition of the ZnO source material. The method further comprises depositing the ITO source material on the ZnO doped ITO layer to cover the ZnO doped ITO layer and form a finished ITO layer.