EPITAXIAL REACTION DEVICE
    1.
    发明公开

    公开(公告)号:EP4417738A1

    公开(公告)日:2024-08-21

    申请号:EP22921648.6

    申请日:2022-12-01

    CPC分类号: Y02P70/50

    摘要: Disclosed is an epitaxial reaction device. The epitaxial reaction device includes: a conveying apparatus and at least one reaction apparatus. The reaction apparatus includes a high-temperature reaction chamber, a gas supply module, and a gas extraction module. The high-temperature reaction chamber is used for providing an environmental condition required during wafer processing. The gas supply module and the gas extraction module are oppositely provided in the high-temperature reaction chamber. The gas supply module is used for supplying reaction gas to the high-temperature reaction chamber, and the gas extraction module is used for extracting residual gas. The conveying apparatus is provided on the high-temperature reaction chamber and located on a same side as the gas supply module. The conveying apparatus is used for taking out and placing the wafer.