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公开(公告)号：EP3112934B1
公开(公告)日：2020-01-29
申请号：EP16176476.6
申请日：2016-06-27
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公开(公告)号：EP2998793A3
公开(公告)日：2016-07-27
申请号：EP15183324.1
申请日：2015-09-01
发明人： FUKAYA, Souichi , SASAMOTO, Kouhei
摘要： A photomask blank includes a chromium-based material film as a hard mask film containing at least one selected from the group consisting of nitrogen, oxygen, carbon and hydrogen, wherein a ratio (A/B) of etching rates per unit film thickness is in a range from 0.7 to 0.9, and the chromium-based material film has a tensile stress or compressive stress corresponding to an amount of warp of up to 70 nm. The present invention provides a photomask blank having a thin film of chromium-based material which is enhanced in etch resistance and lowered in film stress. This enables high-accuracy patterning of a chromium-based material film.
摘要翻译： 光掩模坯料包括铬基材料膜作为含有选自氮，氧，碳和氢中的至少一种的硬掩模膜，其中每单位膜厚的蚀刻速率的比率（A / B）为 在0.7至0.9的范围内，并且铬基材料膜具有对应于至多70nm的翘曲量的拉伸应力或压缩应力。 本发明提供了一种具有耐蚀性增强和膜应力降低的铬基材料薄膜的光掩模坯。 这使得能够高精度地构图铬基材料膜。
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公开(公告)号：EP3125041B1
公开(公告)日：2020-08-19
申请号：EP16178198.4
申请日：2016-07-06
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公开(公告)号：EP3373067A1
公开(公告)日：2018-09-12
申请号：EP18156696.9
申请日：2018-02-14
发明人： FUKAYA, Souichi , INAZUKI, Yukio
摘要： A photomask blank (11) has a transparent substrate (10), an optional first film (1), a second film (2), a third film (3), and a fourth film (4). The first and third films are formed of silicon-containing materials which are resistant to chlorine base dry etching and removable by fluorine base dry etching. The second and fourth films are formed of chromium-containing materials which are resistant to fluorine base dry etching and removable by chlorine base dry etching. An etching clear time of the fourth film is longer than an etching clear time of the second film, on chlorine base dry etching. The fourth film (4) assists in forming an outer frame pattern (3F,4F) of a photomask.
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5.发明公开PHOTOMASK BLANK AND METHOD FOR PREPARING PHOTOMASK 审中-公开FERMOMASKENROHLING UND VERFAHREN ZUR HERSTELLUNG EINER FOTOMASKE
公开(公告)号：EP3125041A1
公开(公告)日：2017-02-01
申请号：EP16178198.4
申请日：2016-07-06
摘要： In a photomask blank comprising a transparent substrate, a resistance layer, and a conductive layer, the resistivity and thickness of the conductive layer and the resistivity and thickness of the resistance layer are selected so as to meet a specific equation (1). In EB lithography, a ground can be established at a necessary fully low resistance value, and EB writing be carried out at a high accuracy.
摘要翻译： 在包括透明基板，电阻层和导电层的光掩模坯料中，选择导电层的电阻率和厚度以及电阻层的电阻率和厚度，以满足特定的等式（1）。 在EB光刻中，可以以必要的完全低电阻值建立接地，并且以高精度进行EB写入。
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6.发明公开PHOTOMASK BLANK, PROCESS FOR PRODUCTION OF PHOTOMASK, AND CHROMIUM-CONTAINING MATERIAL FILM 有权FERMOMASKENROHLING UND VERFAHREN ZUR HERSTELLUNG EINER FOTOMASKE
公开(公告)号：EP2645166A1
公开(公告)日：2013-10-02
申请号：EP11843140.2
申请日：2011-11-18
CPC分类号： G03F1/80 , B32B15/01 , C22C27/06 , C23C14/0641 , C23C14/0676 , G03F1/00 , G03F1/30 , G03F1/50 , G03F1/54
摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400°C or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.
摘要翻译： 在本发明的含铬材料膜中，添加元素，能够使元素和铬的混合物在400℃以下的温度下成为液相。 使用这种含铬材料膜作为光掩模坯料的光学膜（例如遮光膜，蚀刻掩模膜或蚀刻阻挡膜）可以实现氯干蚀刻的改进，同时保持 与常规的含铬材料膜相同的光学特性等，从而提高了图案形成精度。
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公开(公告)号：EP2998793B1
公开(公告)日：2020-05-06
申请号：EP15183324.1
申请日：2015-09-01
发明人： FUKAYA, Souichi , SASAMOTO, Kouhei
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公开(公告)号：EP3373068A1
公开(公告)日：2018-09-12
申请号：EP18156698.5
申请日：2018-02-14
发明人： INAZUKI, Yukio , FUKAYA, Souichi
摘要： A halftone phase shift photomask blank has on a transparent substrate (10) a first film (1) serving as a halftone phase shift film, a second film (2) serving as a light shielding film, a third film (3) serving as a hard mask film, and a fourth film (4). The first and third films are formed of silicon-containing materials which are resistant to chlorine base dry etching and removable by fluorine base dry etching. The second and fourth films are formed of silicon-free, chromium-containing materials which are resistant to fluorine base dry etching and removable by chlorine base dry etching.
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9.发明公开INORGANIC MATERIAL FILM, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING PHOTOMASK 审中-公开FOLIE AUS ANORGANISCHEM MATERIAL，FOTOMASKENROHLING UND VERFAHREN ZUR HERSTELLUNG EINER PHOTOMASKE
公开(公告)号：EP3112934A2
公开(公告)日：2017-01-04
申请号：EP16176476.6
申请日：2016-06-27
IPC分类号： G03F1/54
摘要： An inorganic material film containing tin within the concentration range of 0.1 atomic percent or higher but no higher than 11.5 atomic percent eliminates the problem in which tin localizes and forms into particles, with the result that these particles turn into defects in an optical film. An inorganic material film for a photomask blank according to the present invention film-formed by sputtering and composed of a chromium-containing material includes a light-shielding layer having electrical conductivity, wherein the light-shielding layer contains 0.1 atomic percent or higher but no higher than 11.5 atomic percent of tin and no higher than 15 atomic percent of oxygen. The lower limit of oxygen concentration is, for example, 3 atomic percent. The inorganic material film has electrical conductivity, which is preferably no higher than 5000 Ω/cm 2 when evaluated in terms of resistance values.
摘要翻译： 含有浓度范围为0.1原子％以上且不高于11.5原子％的锡的无机材料膜消除了锡定位并形成颗粒的问题，结果是这些颗粒变成光学膜的缺陷。 根据本发明的用于通过溅射成膜并由含铬材料构成的用于光掩模坯料的无机材料膜包括具有导电性的遮光层，其中遮光层包含0.1原子％以上但不含 高于11.5原子％的锡和不高于15原子％的氧气。 氧浓度的下限例如为3原子％。 无机材料膜具有导电性，当根据电阻值进行评估时，其优选不高于5000Ω/ cm 2。
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公开(公告)号：EP2998793A2
公开(公告)日：2016-03-23
申请号：EP15183324.1
申请日：2015-09-01
发明人： FUKAYA, Souichi , SASAMOTO, Kouhei
IPC分类号： G03F1/00
摘要： A photomask blank includes a chromium-based material film as a hard mask film containing at least one selected from the group consisting of nitrogen, oxygen, carbon and hydrogen, wherein a ratio (A/B) of etching rates per unit film thickness is in a range from 0.7 to 0.9, and the chromium-based material film has a tensile stress or compressive stress corresponding to an amount of warp of up to 70 nm. The present invention provides a photomask blank having a thin film of chromium-based material which is enhanced in etch resistance and lowered in film stress. This enables high-accuracy patterning of a chromium-based material film.
摘要翻译： 光掩模坯料包括铬基材料膜作为含有选自氮，氧，碳和氢中的至少一种的硬掩模膜，其中每单位膜厚的蚀刻速率的比（A / B）为 0.7〜0.9的范围，铬系材料膜的拉伸应力或压缩应力相当于翘曲量高达70nm。 本发明提供一种具有铬基材料薄膜的光掩模坯料，其具有增强的耐蚀刻性和薄膜应力降低的功能。 这使得能够对铬基材料膜进行高精度图案化。
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