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1.发明公开PHOTOMASK BLANK, PROCESS FOR PRODUCTION OF PHOTOMASK, AND CHROMIUM-CONTAINING MATERIAL FILM 有权FERMOMASKENROHLING UND VERFAHREN ZUR HERSTELLUNG EINER FOTOMASKE
公开(公告)号：EP2645166A1
公开(公告)日：2013-10-02
申请号：EP11843140.2
申请日：2011-11-18
CPC分类号： G03F1/80 , B32B15/01 , C22C27/06 , C23C14/0641 , C23C14/0676 , G03F1/00 , G03F1/30 , G03F1/50 , G03F1/54
摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400°C or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.
摘要翻译： 在本发明的含铬材料膜中，添加元素，能够使元素和铬的混合物在400℃以下的温度下成为液相。 使用这种含铬材料膜作为光掩模坯料的光学膜（例如遮光膜，蚀刻掩模膜或蚀刻阻挡膜）可以实现氯干蚀刻的改进，同时保持 与常规的含铬材料膜相同的光学特性等，从而提高了图案形成精度。
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公开(公告)号：EP2645166B1
公开(公告)日：2016-01-13
申请号：EP11843140.2
申请日：2011-11-18
IPC分类号： G03F1/00 , G03F1/54 , C22C27/06 , C22C28/00 , C22C29/00 , C23C14/14 , G03F1/30 , C23C14/06 , G03F1/50 , G03F1/80
CPC分类号： G03F1/80 , B32B15/01 , C22C27/06 , C23C14/0641 , C23C14/0676 , G03F1/00 , G03F1/30 , G03F1/50 , G03F1/54
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