公开(公告)号：EP0284107A3

公开(公告)日：1989-10-25

申请号：EP88104932.4

申请日：1988-03-26

申请人： Shin-Etsu Handotai Company, Limited

发明人： Ito, Taizo ,  Masui, Tsumoru ,  Araki, Kenji ,  Watanabe, Masahide ,  Abe, Takao

IPC分类号： H01L21/322 ,  H01L21/223 ,  H01L21/225 ,  H01L21/316

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3221

摘要： A method of strengthening a silicon wafer in which the wafer is doped with nitrogen. A silicon wafer on which a silicon oxide film has been formed on the surface thereof is subjected to heat treatment at a high temperature of 600 to 1300°C in a gas atmosphere consisting of a nitrogen or nitrogen compound gas, thereby doping the wafer with nitrogen. Thus, the method is capable of doping a silicon wafer with nitrogen with ease. Further, the method is capable of locking a lattice strain or crystallographic defects including a slippage or a dislocation which have occurred not only during the process of growing a silicon monocrystal but also during the formation of integrated circuit devices.

摘要翻译： 一种加强其中晶片被掺杂氮的硅晶片的方法。 在其表面上形成有氧化硅膜的硅晶片在由氮或氮化合物气体组成的气体气氛中在600〜1300℃的高温下进行热处理，从而将氮化物氮化 。 因此，该方法能够容易地用氮掺杂硅晶片。 此外，该方法能够锁定不仅在生长硅单晶的过程中而且在形成集成电路器件期间已经发生的包括滑移或位错的晶格应变或晶体缺陷。

公开(公告)号：EP0284107A2

公开(公告)日：1988-09-28

申请号：EP88104932.4

申请日：1988-03-26

申请人： Shin-Etsu Handotai Company, Limited

发明人： Ito, Taizo ,  Masui, Tsumoru ,  Araki, Kenji ,  Watanabe, Masahide ,  Abe, Takao

IPC分类号： H01L21/322 ,  H01L21/223 ,  H01L21/225 ,  H01L21/316

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3221

摘要： A method of strengthening a silicon wafer in which the wafer is doped with nitrogen. A silicon wafer on which a silicon oxide film has been formed on the surface thereof is subjected to heat treatment at a high temperature of 600 to 1300°C in a gas atmosphere consisting of a nitrogen or nitrogen compound gas, thereby doping the wafer with nitrogen. Thus, the method is capable of doping a silicon wafer with nitrogen with ease. Further, the method is capable of locking a lattice strain or crystallographic defects including a slippage or a dislocation which have occurred not only during the process of growing a silicon monocrystal but also during the formation of integrated circuit devices.

摘要翻译： 一种加强其中晶片被掺杂氮的硅晶片的方法。 在其表面上形成有氧化硅膜的硅晶片在由氮或氮化合物气体组成的气体气氛中在600〜1300℃的高温下进行热处理，从而将氮化物氮化 。 因此，该方法能够容易地用氮掺杂硅晶片。 此外，该方法能够锁定不仅在生长硅单晶的过程中而且在形成集成电路器件期间已经发生的包括滑移或位错的晶格应变或晶体缺陷。

公开(公告)号：EP0500339B1

公开(公告)日：1996-10-09

申请号：EP92301356.9

申请日：1992-02-19

申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

发明人： Ibe, Hiroyuki ,  Terashima, Seiichi ,  Masui, Tsumoru

IPC分类号： G01N23/207

CPC分类号： G01N23/20008 ,  G01N23/207 ,  G01N2223/056 ,  G01N2223/1016 ,  G01N2223/3306 ,  G01N2223/604

公开(公告)号：EP0500339A3

公开(公告)日：1993-07-28

申请号：EP92301356.9

申请日：1992-02-19

申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

发明人： Ibe, Hiroyuki ,  Terashima, Seiichi ,  Masui, Tsumoru

IPC分类号： G01N23/207

CPC分类号： G01N23/20008 ,  G01N23/207 ,  G01N2223/056 ,  G01N2223/1016 ,  G01N2223/3306 ,  G01N2223/604

摘要： A method and an apparatus for detecting a crystallographic axis of a single crystal ingot based on the X-ray diffractometry, wherein and whereby a crystal habit line of the single crystal ingot is optically detected first, and thereafter making use of the geographical relation of the crystallographic axis to the crystal habit line, the crystallographic axis is detected with improved economy of time and labor and with improved precision, so that the orientation flat (OF) is made in the right place and direction.

公开(公告)号：EP0500339A2

公开(公告)日：1992-08-26

申请号：EP92301356.9

申请日：1992-02-19

申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

发明人： Ibe, Hiroyuki ,  Terashima, Seiichi ,  Masui, Tsumoru

IPC分类号： G01N23/207

CPC分类号： G01N23/20008 ,  G01N23/207 ,  G01N2223/056 ,  G01N2223/1016 ,  G01N2223/3306 ,  G01N2223/604

摘要： A method and an apparatus for detecting a crystallographic axis of a single crystal ingot based on the X-ray diffractometry, wherein and whereby a crystal habit line of the single crystal ingot is optically detected first, and thereafter making use of the geographical relation of the crystallographic axis to the crystal habit line, the crystallographic axis is detected with improved economy of time and labor and with improved precision, so that the orientation flat (OF) is made in the right place and direction.

摘要翻译： 一种方法和装置，用于检测基于所述X射线衍射法，worin和由此的单晶锭的晶轴的单晶锭的晶体习性线被光学首先检测，并且此后利用的地理关系的 结晶轴对晶体习性线，晶轴具有改进的时间和劳动并且具有改进的精度检测到经济，所以没有定向平面（OF）在正确的位置和方向是由。