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    Method of strengthening silicon wafer
    1.
    发明公开
    Method of strengthening silicon wafer 失效
    加强硅波的方法

    公开(公告)号：EP0284107A3

    公开(公告)日：1989-10-25

    申请号：EP88104932.4

    申请日：1988-03-26

    申请人： Shin-Etsu Handotai Company, Limited

    发明人： Ito, Taizo ,  Masui, Tsumoru ,  Araki, Kenji ,  Watanabe, Masahide ,  Abe, Takao

    IPC分类号： H01L21/322 ,  H01L21/223 ,  H01L21/225 ,  H01L21/316

    CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3221

    摘要： A method of strengthening a silicon wafer in which the wafer is doped with nitrogen. A silicon wafer on which a silicon oxide film has been formed on the surface thereof is subjected to heat treatment at a high temperature of 600 to 1300°C in a gas atmosphere consisting of a nitrogen or nitrogen compound gas, thereby doping the wafer with nitrogen. Thus, the method is capable of doping a silicon wafer with nitrogen with ease. Further, the method is capable of locking a lattice strain or crystallographic defects including a slippage or a dislocation which have occurred not only during the process of growing a silicon monocrystal but also during the formation of integrated circuit devices.

    摘要翻译： 一种加强其中晶片被掺杂氮的硅晶片的方法。 在其表面上形成有氧化硅膜的硅晶片在由氮或氮化合物气体组成的气体气氛中在600〜1300℃的高温下进行热处理，从而将氮化物氮化 。 因此，该方法能够容易地用氮掺杂硅晶片。 此外，该方法能够锁定不仅在生长硅单晶的过程中而且在形成集成电路器件期间已经发生的包括滑移或位错的晶格应变或晶体缺陷。

    Automatic control method for growing single-crystal neck portions
    2.
    发明公开
    Automatic control method for growing single-crystal neck portions 失效
    维尔法赫尔·祖尔自动化Steuerung derZüchtungdes Halsteiles eines Einkristalles。

    公开(公告)号：EP0499220A1

    公开(公告)日：1992-08-19

    申请号：EP92102297.6

    申请日：1992-02-12

    申请人： Shin-Etsu Handotai Company, Limited

    发明人： Araki, Kenji

    IPC分类号： C30B15/22

    CPC分类号： C30B15/22

    摘要： The method automatically controls the growing of a single-crystal neck portion by the CZ method. The speed of pulling up the crystal is adjusted so that the crystal diameter control deviation becomes closer to zero. Combinations of the crystal diameter control deviation ΔD being large or small and the pulling-up speed V being high or low are employed as fuzzy inference conditions. According to such conditions, a correction value for the power supplied to a melt heater 18 is calculated, based on the fuzzy inference.

    摘要翻译： 该方法通过CZ方法自动控制单晶颈部的生长。 调节晶体的拉伸速度，使得晶体直径控制偏差变得更接近零。 作为模糊推理条件，使用晶体直径控制偏差DELTA D大或小，升高速度V为高或低的组合。 根据这些条件，基于模糊推理，计算供给到熔融加热器18的功率的校正值。

    Silicon single crystal growth control apparatus and method forming and using a temperature pattern of heater
    3.
    发明公开
    Silicon single crystal growth control apparatus and method forming and using a temperature pattern of heater 失效
    一种用于形成加热温度和设备用于生长使用这种模式硅单晶的图案的方法。

    公开(公告)号：EP0429839A1

    公开(公告)日：1991-06-05

    申请号：EP90120049.3

    申请日：1990-10-19

    申请人： Shin-Etsu Handotai Company, Limited

    发明人： Araki, Kenji ,  Meada, Akiho ,  Baba, Masahiko

    IPC分类号： C30B15/00 ,  C30B15/26 ,  C30B15/14 ,  C30B29/06

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/26 ,  Y10T117/1008

    摘要： Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired squality, the diameter of the Si single crystal is4controlled by controlling the pull-up speed of the Si single crystal, the sum of a reference temperature set value T B (X), which is a function of a pull-up distance X of the Si single crystal from a certain growth point, and a value proportional to a diameter deviation ΔD is regarded as a reference temperature, and electric power supplied to a heater (24) for heating the Si molten liquid is controlled so that the temperature of the vicinity of the heater is equal to the reference temperature. In order to easily and quickly set the temperature pattern, various operational data in producing a Si single crystal is automatically collected and stored in a magnetic memory disk (82) corresponding to quality data of the Si single crystals which have been produced, data similar to the quality of a Si single crystal to be produced is retrieved from the stored data, an operator selects the most similar data, the selected operational data is displayed in a display unit (80), and the operator sets the reference temperature pattern T B (X) on a screen of the display unit by using a mouse (78).

    摘要翻译： 用于在装置用于通过使用提拉法从硅熔融液35提拉硅单晶36向上。 为了生产具有所需squality Si单晶，通过控制Si单晶的上拉速度，基准温度设定值TB（X）的总和is4controlled的Si单晶的直径，在所有这是一个 从一定的增长点在Si单晶，和一个值正比于直径偏差DELTA D的上拉距离X的函数被视为一个基准温度，并提供给一个加热器（24）的电力，用于加热所述Si 熔化的液体被控制做了加热器附近的温度为等于参考温度。 为了容易且迅速地设定的温度的模式，在生产Si单晶的各种操作数据被自动收集并存储在磁存储盘（82）相应于已生产出的Si单结晶的质量的数据，类似于数据 Si单晶的待产生从所存储的数据中检索到操作者的质量选择最类似的数据，所选择的操作数据显示在显示单元（80），和操作者设定的基准温度TB图案（X ）所述显示单元的通过使用鼠标（78）在屏幕上。

    Method of strengthening silicon wafer
    4.
    发明公开
    Method of strengthening silicon wafer 失效
    Verfahren zumVerstärkeneines Silicium-Plättchens。

    公开(公告)号：EP0284107A2

    公开(公告)日：1988-09-28

    申请号：EP88104932.4

    申请日：1988-03-26

    申请人： Shin-Etsu Handotai Company, Limited

    发明人： Ito, Taizo ,  Masui, Tsumoru ,  Araki, Kenji ,  Watanabe, Masahide ,  Abe, Takao

    IPC分类号： H01L21/322 ,  H01L21/223 ,  H01L21/225 ,  H01L21/316

    CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3221

    摘要： A method of strengthening a silicon wafer in which the wafer is doped with nitrogen. A silicon wafer on which a silicon oxide film has been formed on the surface thereof is subjected to heat treatment at a high temperature of 600 to 1300°C in a gas atmosphere consisting of a nitrogen or nitrogen compound gas, thereby doping the wafer with nitrogen. Thus, the method is capable of doping a silicon wafer with nitrogen with ease. Further, the method is capable of locking a lattice strain or crystallographic defects including a slippage or a dislocation which have occurred not only during the process of growing a silicon monocrystal but also during the formation of integrated circuit devices.

    摘要翻译： 一种加强其中晶片被掺杂氮的硅晶片的方法。 在其表面上形成有氧化硅膜的硅晶片在由氮或氮化合物气体组成的气体气氛中在600〜1300℃的高温下进行热处理，从而将氮化物氮化 。 因此，该方法能够容易地用氮掺杂硅晶片。 此外，该方法能够锁定不仅在生长硅单晶的过程中而且在形成集成电路器件期间已经发生的包括滑移或位错的晶格应变或晶体缺陷。

    Device and method for changing czochralski crucible rotation rate
    5.
    发明公开
    Device and method for changing czochralski crucible rotation rate 失效
    Vorrichtung und Verfahren zurÄnderungdes Drehratens eines Czochralski-Tiegels

    公开(公告)号：EP0776997A1

    公开(公告)日：1997-06-04

    申请号：EP96308814.1

    申请日：1996-12-05

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Kitagawa, Kouji ,  Mizuishi, Kouji ,  Urano, Masahiko ,  Araki, Kenji ,  Iino, Eiichi ,  Fusegawa, Izumi

    IPC分类号： C30B15/30

    CPC分类号： C30B15/30 ,  Y10S117/917 ,  Y10T117/1032

    摘要： A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.

    摘要翻译： 提供了一种用于通过CZ或MCZ方法制造单晶的新型装置，其包括用于在其中包含硅熔体的坩埚，用于拉出单晶的线卷筒和线，电动机和用于旋转坩埚的旋转轴， 一个变速装置被插在电动机和旋转轴之间，并且如果需要的话被插入磁场发生器中，通过该磁场发生器将磁场施加到熔体。 根据用于制造单晶的装置，能够提高坩埚的旋转精度，能够高精度地控制拉伸单晶中的杂质浓度。

    Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
    10.
    发明公开
    Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method 失效
    用于在硅单晶调节的氧浓度的方法和装置。

    公开(公告)号：EP0425837A1

    公开(公告)日：1991-05-08

    申请号：EP90119091.8

    申请日：1990-10-05

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED

    发明人： Sonokawa, Susumu ,  Araki, Kenji ,  Iwasaki, Atsushi ,  Baba, Masahiko A-5-3, Kohu apartment bldg. 791-4

    IPC分类号： C30B15/00 ,  C30B29/06

    CPC分类号： C30B29/06 ,  C30B15/00

    摘要： Used in a Si single crystal pulling apparatus using the Czochralski method, to lower the concentration of oxygen in the Si single crystal without increasing the production cost and to make the concentration substantially even all over the Si single crystal. The crystal 36 is produced by disposing a straightening tube 40 concentrically with and above a quartz crucible 22, letting inert gas flow down through the tube, dipping a seed crystal in Si molten liquid 28 in the quartz crucible and then pulling the seed crystal up. The concentration of oxygen in the Si single crystal is adjusted by controlling the distance H between the surface of the Si molten liquid and the bottom end of the straightening tube in accordance with the pull-up length Y or the pull-up time from a certain growth point of the crystal.

    摘要翻译： 用于Si单晶采用切克劳斯基法提拉装置，以降低单晶硅的氧的浓度，而不增加生产成本，并且使浓度基本均匀遍布在Si单晶。 晶体36由设置一矫直管40同心和石英坩埚22的上方，通过该管使惰性气体流下，浸渍在硅晶种的熔融液体28在石英坩埚，然后拉晶种向上产生。 在所述Si单晶的氧的浓度是通过控制在Si熔液的表面和矫直管的在与上拉长度Y或上拉时从某个雅舞蹈的底端之间的距离H调整 晶体的增长点。