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公开(公告)号：EP4112787A1
公开(公告)日：2023-01-04
申请号：EP22181474.2
申请日：2022-06-28
申请人： Shin-Etsu Polymer Co., Ltd. , Shin-Etsu Chemical Co., Ltd. , National University Corporation Saitama University
摘要： A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.
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公开(公告)号：EP3396031A1
公开(公告)日：2018-10-31
申请号：EP18168718.7
申请日：2018-04-23
申请人： Shin-Etsu Polymer Co., Ltd. , National University Corporation Saitama University , Shin-Etsu Chemical Co., Ltd.
CPC分类号： H01L21/7813 , B23K26/0006 , B32B43/006 , C30B29/16 , C30B33/02 , C30B33/06 , H01L21/02414 , H01L21/02527
摘要： A substrate manufacturing method includes: a first step of disposing a condenser for condensing a laser beam in a non-contact manner on a surface 20r of a magnesium oxide single crystal substrate 20 to be irradiated; and a second step of irradiating a laser beam to a surface of the magnesium oxide single crystal substrate 20 and condensing the laser beam into an inner portion of the single crystal member under designated irradiation conditions using the condenser, and at a same time, two-dimensionally moving the condenser and the magnesium oxide single crystal substrate 20 relatively to each other, and sequentially forming processing marks to sequentially allow planar peeling.
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公开(公告)号：EP3536437A1
公开(公告)日：2019-09-11
申请号：EP19161290.2
申请日：2019-03-07
申请人： Shin-Etsu Polymer Co., Ltd. , Shin-Etsu Chemical Co., Ltd. , National University Corporation Saitama University
IPC分类号： B23K26/00 , B23K26/08 , B23K26/53 , C03B33/06 , C03B29/16 , B23K101/18 , B23K101/40 , B23K103/08
摘要： A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. A first step is performed which disposes a condenser (14) for condensing a laser beam (B) on an irradiated surface (20r) of a magnesium oxide single crystal member (20) in a non-contact manner. A second step is performed which forms processing mark lines in parallel by irradiating the laser beam (B) to the surface (20r) of the single crystal substrate (20) under designated irradiation conditions to condense the laser beam (B) into an inner portion of the single crystal substrate (20) while moving the condenser (14) and the single crystal substrate (20) relative to each other in a two-dimensional manner. A third step is performed which forms new processing mark lines between the adjacent irradiation lines in the second step to allow planar separation, by irradiating the laser beam (B) to the surface (20r) of the single crystal substrate (20) under designated irradiation conditions to condense the laser beam (B) into an inner portion of the single crystal substrate (20) while moving the condenser (14) and the single crystal substrate (20) relative to each other in a two-dimensional manner.
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公开(公告)号：EP4112786A1
公开(公告)日：2023-01-04
申请号：EP22181465.0
申请日：2022-06-28
申请人： Shin-Etsu Polymer Co., Ltd. , Shin-Etsu Chemical Co., Ltd. , National University Corporation Saitama University
摘要： A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond; and a step of forming a modified layer 20, which includes a processing mark 21b of graphite and a crack 22b extending along a surface (111) around the processing mark 21b, along the surface (111) of the single crystal diamond at a predetermined depth from an upper surface of the block by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally.
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公开(公告)号：EP3467159A1
公开(公告)日：2019-04-10
申请号：EP18197096.3
申请日：2018-09-27
申请人： Shin-Etsu Polymer Co., Ltd. , Shin-Etsu Chemical Co., Ltd. , National University Corporation Saitama University
摘要： A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. Performed is a first step of disposing a laser condensing means on a surface of a magnesium oxide single crystal substrate (20) of magnesium oxide to be irradiated in a non-contact manner, the laser condensing means being for condensing a laser beam. Then, a second step of causing planar peeling from a surface side of the magnesium oxide single crystal substrate (20) to be irradiated is performed. In this second step, a laser beam (B) is irradiated to the surface of the single crystal substrate (20) and the laser beam (B) is condensed into an inner portion of the single crystal substrate (20) under designated irradiation conditions. Simultaneously with the irradiation and the condensation, the laser condensing means (14) and the single crystal substrate (20) are two-dimensionally moved relatively to each other. In this way, processing mark lines (LK), each of which is composed in such a manner that processing marks (K) formed by thermal processing are formed in line at an inner portion of a single crystal member, are formed in parallel to one another. At this time, overlapped line portions (DK) in which the processing marks (K) overlap one another are formed in at least a part of the processing mark lines (LK), whereby the planar peeling is caused from the irradiated surface (20r) side .
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公开(公告)号：EP4163046A1
公开(公告)日：2023-04-12
申请号：EP22199538.4
申请日：2022-10-04
发明人： SOLTANI, Bahman , YASUDA, Koichiro , TAKAGI, Ryota , KAWAZU, Tomoki , SOBAJIMA, Shunsuke , ISSHIKI, Yutaro , NOMURA, Sodai , SHIRAI, Hideaki , YAMADA, Yohei , IKENO, Junichi
IPC分类号： B23K26/073 , B23K26/082 , B23K26/38 , B23K26/53 , B23K101/40 , B23K103/00
摘要： A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections (31) at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold (Eth). The energy density satisfies at least one of conditions of a peak value (Ep) of the energy density is lower than or equal to 44 J/cm 2 , a rising rate (α) of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm 3 , and a range of depth (W) where the energy density exceeds the reforming threshold is smaller than or equal to 30 µm.
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