-
1.发明公开Preparation of monoalkyl group 15 metal dihalides and dihydrides 审中-公开Herstellung von monoalkylierten Dihalogeniden und Dihydriden von Metallen der Gruppe 15
公开(公告)号：EP1335416A1
公开(公告)日：2003-08-13
申请号：EP03250286.6
申请日：2003-01-16
申请人： Shipley Co. L.L.C.
发明人： Dicarlo Jr., Ronald L. , Shenai-Khatkhate, Deodatta Vinayak , Power, Michael Brendan , Amamchyan, Artashes
CPC分类号： C07F9/723 , C07F9/5068 , C07F9/52 , C07F9/72 , C23C16/301
摘要： Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula R n M 1 X 3-n where R is an alkyl, M 1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.
摘要翻译： 公开了通过VA族金属三卤化物与有机锂试剂或式R 1 M 3-n-n的化合物的反应制备高产率和高纯度的单烷基基团VA金属二卤化物的方法，其中R是烷基， M 1是IIIA族金属，X是卤素，n是1至3的整数。这种单烷基基团VA金属二卤化物基本上不含氧化杂质，醚类溶剂和金属杂质。 通过还原这种单烷基基团VA金属二卤化物化合物，可以容易地以高产率和高纯度制备单烷基VA族金属二氢化合物。
-
2.发明授权Organoindium compounds for use in chemical vapour deposition processes 有权Organoindiumverbindungen在化学汽相淀积用
公开(公告)号：EP1335415B1
公开(公告)日：2005-08-03
申请号：EP03250285.8
申请日：2003-01-16
申请人： Shipley Co. L.L.C.
CPC分类号： C23C16/301 , C07F5/00 , C07F5/06
-
公开(公告)号：EP1335415A1
公开(公告)日：2003-08-13
申请号：EP03250285.8
申请日：2003-01-16
申请人： Shipley Co. L.L.C.
CPC分类号： C23C16/301 , C07F5/00 , C07F5/06
摘要： Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.
摘要翻译： 公开了含有两个体积大的烷基的三烷基鎓化合物，其是液体或易于液化的固体，并且具有用于气相沉积工艺的足够的蒸气压，以及使用这种化合物沉积含铟膜的方法。
-
-
搜索结果
3 条记录 (耗时 0.01 秒)
