摘要:
Embodiments of the invention generally relate to a concentric gas manifold assembly used in deposition reactor or system during a vapor deposition process. In one embodiment, the manifold assembly has an upper section coupled to a middle section coupled to a lower section. The middle section contains an inlet, a manifold extending from the inlet to a passageway, and a tube extending along a central axis and containing a channel along the central axis and in fluid communication with the passageway. The lower section of the manifold assembly contains a second manifold extending from a second inlet to a second passageway and an opening concentric with the central axis. The tube extends to the opening to form a second channel between the tube and an edge of the opening. The second channel is concentric with the central axis and is in fluid communication with the second passageway.
摘要:
Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula R n M 1 X 3-n where R is an alkyl, M 1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.
摘要翻译:公开了通过VA族金属三卤化物与有机锂试剂或式R 1 M 3-n-n的化合物的反应制备高产率和高纯度的单烷基基团VA金属二卤化物的方法,其中R是烷基, M 1是IIIA族金属,X是卤素,n是1至3的整数。这种单烷基基团VA金属二卤化物基本上不含氧化杂质,醚类溶剂和金属杂质。 通过还原这种单烷基基团VA金属二卤化物化合物,可以容易地以高产率和高纯度制备单烷基VA族金属二氢化合物。
摘要:
An electro-optic system 10 is described which comprises an infrared sensor 12 and a processing unit 14 protected by a protective infrared transmissive window 16. The window 16 comprises a substrate layer 18 which may comprise gallium arsenide, zinc selenide, zinc sulfide or germanium. A protective layer 22 of gallium phosphide is formed outwardly from the substrate layer 18. An anti-reflective coating 20 is formed inwardly from substrate layer 18 and an outward anti-reflective coating 26 is formed outwardly from protective layer 22. The incorporation of protective layer 22 allows for excellent impact and wear resistance without interfering with the optical characteristics of the protective window 16.
摘要:
A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms.
摘要:
Die Erfindung betrifft metallorganische Verbindungen des Aluminiums, Galliums und Indiums, die intramolekular stabilisiert sind, sowie deren Verwendung zur Herstellung dünner Filme oder epitaktischer Schichten durch Gasphasenabscheidung.
摘要:
A method for depositing GaAs films on a substrate involving vapor phase photochemical decomposition of selected gallium-arsenic complexes to form GaAs for deposition on the substrate. The gallium-arsenic complexes have the formula X3GaAsR3, where X is methyl or trifluoromethyl and R is hydrogen, methyl or trifluoromethyl. The gallium-arsenic complex vapor is irradiated with ultraviolet light at a sufficient wavelength and a sufficient intensity to photochemically convert the vapor to GaAs for deposition.