公开(公告)号：EP2077345A1

公开(公告)日：2009-07-08

申请号：EP08020970.3

申请日：2008-12-03

申请人： Siltron Inc.

发明人： Lee, Ho-Jun ,  Kim, Doo-Soo ,  Lee, Dong-Kun ,  Kim, Yong-Jin

IPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： C30B29/406 ,  C30B25/18

摘要： The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.

摘要翻译： 本发明涉及一种用于制造氮化镓单晶基板，包括（a）在由具有比氮化镓热膨胀系数较小和冷却氮化镓电影的材料制成的平坦的基部衬底上生长的氮化镓电影 凸向向上弯曲基础基板和氮化镓膜，并创建在氮化镓薄膜 - 裂缝; （B）生长在位于向上凸基底基板上裂纹产生的氮化镓薄膜的氮化镓单晶层; 和（c）冷却具有生长的氮化镓单晶层，使向上凸所得产物平坦或弯曲凸面向下的向上凸的所得产物和所得到的产物的同时自分裂基础基板和氮化镓单 在裂纹创建的氮化镓从海誓山盟结晶层薄膜夹在其间。

公开(公告)号：EP2037013A3

公开(公告)日：2009-10-07

申请号：EP08013036.2

申请日：2008-07-18

申请人： Siltron Inc.

发明人： Kim, Yon-Jin ,  Kim, Ji-Hoon ,  Lee, Dong-Kun ,  Kim, Doo-Soo ,  Lee, Ho-Jun

IPC分类号： C30B29/40 ,  C30B25/02 ,  C30B25/18

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18

摘要： Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si 3 N 4 ) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.

公开(公告)号：EP1921668B1

公开(公告)日：2016-05-11

申请号：EP07120215.4

申请日：2007-11-07

申请人： Siltron Inc.

发明人： Kim, Yong-Jin ,  Kim, Doo-Soo ,  Lee, Ho-Jun ,  Lee, Dong-Kun

IPC分类号： H01L21/20 ,  H01L33/38 ,  H01S5/02

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/20 ,  H01L33/38

公开(公告)号：EP2333817B1

公开(公告)日：2015-04-15

申请号：EP11002687.9

申请日：2008-07-18

申请人： Siltron Inc.

发明人： Lee, Ho-Jun ,  Kim, Yong-Jin ,  Lee, Dong-Kun ,  Kim, Doo-Soo ,  Kim, Ji-Hoon

IPC分类号： H01L21/20 ,  H01L21/02

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

公开(公告)号：EP2037013A2

公开(公告)日：2009-03-18

申请号：EP08013036.2

申请日：2008-07-18

申请人： Siltron Inc.

发明人： Kim, Yon-Jin ,  Kim, Ji-Hoon ,  Lee, Dong-Kun ,  Kim, Doo-Soo ,  Lee, Ho-Jun

IPC分类号： C30B29/40 ,  C30B25/02 ,  C30B25/18

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18

摘要： Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si 3 N 4 ) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.

摘要翻译： 提供了一种用于制备底物生长氮化镓和氮化镓衬底的方法。 该方法包括在硅衬底的表面执行热清洁，在以原位方式形成氮化硅（Si 3 N 4）微掩膜的硅衬底的表面上，并通过外延横向过生长生长氮化镓层 （ELO），使用在所述微掩膜开口。 。根据该方法，通过改进典型的ELO，能够简化方法制备用于氮化镓生长衬底和所述氮化镓衬底和降低工艺成本。

公开(公告)号：EP2333817A3

公开(公告)日：2012-05-23

申请号：EP11002687.9

申请日：2008-07-18

申请人： Siltron Inc.

发明人： Lee, Ho-Jun ,  Kim, Yong-Jin ,  Lee, Dong-Kun ,  Kim, Doo-Soo ,  Kim, Ji-Hoon

IPC分类号： H01L21/20 ,  H01L21/02

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

公开(公告)号：EP1921668A3

公开(公告)日：2012-03-14

申请号：EP07120215.4

申请日：2007-11-07

申请人： Siltron Inc.

发明人： Kim, Yong-Jin ,  Kim, Doo-Soo ,  Lee, Ho-Jun ,  Lee, Dong-Kun

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L33/00 ,  H01S5/02

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/20 ,  H01L33/38

摘要： The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

公开(公告)号：EP2333817A2

公开(公告)日：2011-06-15

申请号：EP11002687.9

申请日：2008-07-18

申请人： Siltron Inc.

发明人： Lee, Ho-Jun ,  Kim, Yong-Jin ,  Lee, Dong-Kun ,  Kim, Doo-Soo ,  Kim, Ji-Hoon

IPC分类号： H01L21/20 ,  H01L21/02

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

摘要翻译： 提供了一种制备化合物半导体衬底的方法。 该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下面形成空隙，并且将化合物半导体外延层上的化合物半导体外延层 生长，使得衬底和化合物半导体外延层沿着空隙自我分离。 球形球处理可以减少错位几代。 此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。

公开(公告)号：EP2053637A3

公开(公告)日：2010-04-28

申请号：EP08013037.0

申请日：2008-07-18

申请人： Siltron Inc.

发明人： Lee, Ho-Jun ,  Kim, Yong-Jin ,  Lee, Dong-Kun ,  Kim, Doo-Soo ,  Kim, Ji-Hoon

IPC分类号： H01L21/20 ,  H01L21/02

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls (20) on a substrate (10), growing a compound semiconductor epitaxial layer (30) on the substrate coated with the spherical balls while allowing voids (35) to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids (35). The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

公开(公告)号：EP1936668A2

公开(公告)日：2008-06-25

申请号：EP07122820.9

申请日：2007-12-11

申请人： Siltron Inc.

发明人： Kim, Doo-Soo ,  Lee, Ho-Jun ,  Kim, Yong-Jin ,  Lee, Dong-Kun

IPC分类号： H01L21/20

CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0254

摘要： The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

摘要翻译： 本发明涉及氮化镓半导体衬底，例如氮化镓衬底及其制造方法。 本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部分向周边部分生长氮化物半导体膜时吸收或减小施加更大的应力。 也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。