公开(公告)号：EP2979300B1

公开(公告)日：2019-05-22

申请号：EP14713102.3

申请日：2014-03-26

申请人： Soitec ,  Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： AULNETTE, Cécile ,  KRAUSE, Rainer ,  DIMROTH, Frank ,  GUIOT, Eric ,  MAZALEYRAT, Eric ,  DRAZEK, Charlotte

IPC分类号： H01L27/142 ,  H01L31/0304 ,  H01L31/052 ,  H01L31/0687 ,  H01L31/02

公开(公告)号：EP2979300A1

公开(公告)日：2016-02-03

申请号：EP14713102.3

申请日：2014-03-26

申请人： Soitec ,  Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： AULNETTE, Cécile ,  KRAUSE, Rainer ,  DIMROTH, Frank ,  GRAVE, Matthias ,  GUIOT, Eric ,  MAZALEYRAT, Eric ,  DRAZEK, Charlotte

IPC分类号： H01L27/142 ,  H01L31/0304 ,  H01L31/052 ,  H01L31/0687 ,  H01L31/02

CPC分类号： H01L31/0443 ,  H01L27/1421 ,  H01L31/028 ,  H01L31/052 ,  H01L31/054 ,  H01L31/0687 ,  H01L31/0693 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

摘要： This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell structure (3420), comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

摘要翻译： 本公开涉及一种用于支持聚光器光伏电池结构（3420）的太阳能电池组件结构，其包括半导体结构和二极管，其中所述半导体结构包括第一半导体区域，其至少一部分用于将集中器光伏电池结构 以及用于在第二半导体区域内或上在第二半导体区域上实现二极管的第二半导体区域，并且其中用于放置集中器光伏电池结构和第二半导体区域的第一半导体区域的部分不是垂直重叠的。

公开(公告)号：EP1631984B1

公开(公告)日：2017-08-23

申请号：EP04767238.1

申请日：2004-06-03

申请人： Soitec ,  Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： AULNETTE, Cécile ,  BATAILLOU, Benoît ,  GHYSELEN, Bruno ,  MORICEAU, Hubert

IPC分类号： H01L21/762 ,  H01L21/20

CPC分类号： H01L21/76254 ,  H01L21/76259

公开(公告)号：EP3411898A1

公开(公告)日：2018-12-12

申请号：EP17703365.1

申请日：2017-02-01

申请人： Soitec

发明人： AULNETTE, Cécile ,  DIMROTH, Frank ,  OLIVA, Eduard

IPC分类号： H01L21/18 ,  H01L31/0304 ,  H01L31/18

CPC分类号： H01L21/187 ,  H01L31/056 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1896

摘要： Engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 m Ohm·cm², preferentially below 1 m Ohm·cm²; and wherein doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferentially less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 m Ohm·cm², preferentially less than m Ohm·cm². 1

公开(公告)号：EP1588415B1

公开(公告)日：2012-11-28

申请号：EP04700490.8

申请日：2004-01-07

申请人： Soitec

发明人： GHYSELEN, Bruno ,  AULNETTE, Cécile ,  OSTERNAUD, Bénédicte ,  AKATSU, Takeshi ,  FAURE, Bruce

IPC分类号： H01L21/762 ,  H01L21/02

CPC分类号： H01L21/02032 ,  H01L21/76254