公开(公告)号：EP1592057A3

公开(公告)日：2006-08-23

申请号：EP05103367.8

申请日：2005-04-26

申请人： Solid State Measurements, Inc.

发明人： Howland Jr., William H. ,  Healy, James E.

IPC分类号： G01N13/12 ,  H01L21/66 ,  G01R31/28 ,  G12B21/00 ,  G12B21/22 ,  G12B21/04

CPC分类号： B08B5/00 ,  G01Q60/14 ,  G01Q60/16 ,  G01Q70/02 ,  G01R3/00

摘要： To remove and/or prevent contamination of a probe, at least a portion of the probe is positioned in a chamber having an inlet passage and an outlet passage, with a distal end of the probe extending through the outlet passage and terminating on a side thereof opposite the chamber. A gas is caused to flow through the inlet passage into the chamber and out the outlet passage, thereby modifying an environment surrounding the distal end of the probe. The gas may be heated prior to injection.

摘要翻译： 以除去和/或防止样品污染，至少一部分样品在具有入口通道和在出口通道的腔室，与所述探针通过出口通道延伸的远端和其终止于一个侧定位 该腔室相对。 甲气流经的进气通道流入所述腔室和流出出口通道，从而改变周围的远端环境的样品。 该气体可以在注射之前加热。

公开(公告)号：EP1592057A2

公开(公告)日：2005-11-02

申请号：EP05103367.8

申请日：2005-04-26

申请人： Solid State Measurements, Inc.

发明人： Howland Jr., William H. ,  Healy, James E.

IPC分类号： H01L21/66 ,  G01R31/28 ,  G12B21/00 ,  G12B21/22 ,  G12B21/04

CPC分类号： B08B5/00 ,  G01Q60/14 ,  G01Q60/16 ,  G01Q70/02 ,  G01R3/00

摘要： To remove and/or prevent contamination of a probe, at least a portion of the probe is positioned in a chamber having an inlet passage and an outlet passage, with a distal end of the probe extending through the outlet passage and terminating on a side thereof opposite the chamber. A gas is caused to flow through the inlet passage into the chamber and out the outlet passage, thereby modifying an environment surrounding the distal end of the probe. The gas may be heated prior to injection.

公开(公告)号：EP1584932A1

公开(公告)日：2005-10-12

申请号：EP05075799.6

申请日：2005-04-07

申请人： Solid State Measurements, Inc.

发明人： Mazur, Robert G. ,  Healy, James E. ,  Hillard, Robert J.

IPC分类号： G01R31/26

CPC分类号： G01R31/2648

摘要： A sheet resistance test of a wafer (4) or sample can be performed by causing a plurality of spaced contacts (10,12), each of which either does not form oxides thereon or which forms conductive oxides thereon, to touch a surface (18) of the wafer without penetrating or damaging the surface. An electrical stimulus is then applied to the wafer via one or more of the contacts and the electrical response of the semiconducting material to the electrical stimulus is detected via one or more of the contacts. At least one electrical property of the wafer can be determined from the measured response and the applied electrical stimulus.

摘要翻译： 晶片（4）或样品的薄层电阻测试可以通过使多个间隔开的触点（10,12）在其上不形成氧化物或在其上形成导电氧化物的方式来接触表面（18,12） ），而不会渗透或损坏表面。 然后通过一个或多个触点将电刺激施加到晶片，并且经由一个或多个触点检测半导体材料对电刺激的电响应。 可以根据测量的响应和所施加的电刺激来确定晶片的至少一个电性质。