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公开(公告)号:EP2073270A2
公开(公告)日:2009-06-24
申请号:EP08021947.0
申请日:2008-12-17
申请人: Sony Corporation
发明人: Hirota, Isao , Harada, Kouichi , Karasawa, Nobuhiro , Maruyama, Yasushi , Nitta, Yoshikazu , Terakago, Hiroyuki , Takashima, Hajime , Nomura, Hideo
IPC分类号: H01L27/146
CPC分类号: H01L27/1464 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/1463
摘要: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.
摘要翻译: 固态成像装置包括形成在具有照射光的第一基板表面侧的基板上的像素单元和形成元件的第二基板表面侧,并且被相邻单元组分隔开, 元素分离层,或者以多个像素单元为单位。 每个像素单元具有形成在第一基板表面侧上的第一导电阱和形成在第二基板表面侧上的第二导电阱。 第一导电孔从第一基板表面侧接收光,并且具有用于所接收的光的光电转换功能和电荷累积功能。 在第二导电孔中形成检测第一导电阱中的累积电荷并具有阈值调制功能的晶体管。
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公开(公告)号:EP2073270B1
公开(公告)日:2014-03-19
申请号:EP08021947.0
申请日:2008-12-17
申请人: Sony Corporation
发明人: Hirota, Isao , Harada, Kouichi , Karasawa, Nobuhiro , Maruyama, Yasushi , Nitta, Yoshikazu , Terakago, Hiroyuki , Takashima, Hajime , Nomura, Hideo
IPC分类号: H01L27/146
CPC分类号: H01L27/1464 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/1463
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公开(公告)号:EP2073270A3
公开(公告)日:2012-05-16
申请号:EP08021947.0
申请日:2008-12-17
申请人: Sony Corporation
发明人: Hirota, Isao , Harada, Kouichi , Karasawa, Nobuhiro , Maruyama, Yasushi , Nitta, Yoshikazu , Terakago, Hiroyuki , Takashima, Hajime , Nomura, Hideo
IPC分类号: H01L27/146
CPC分类号: H01L27/1464 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/1463
摘要: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.
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