公开(公告)号：EP2372768A2

公开(公告)日：2011-10-05

申请号：EP11002388.4

申请日：2011-03-22

申请人： Sony Corporation

发明人： Izuha, Kyoko ,  Harada, Kouichi

IPC分类号： H01L27/146

CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H01L27/14685

摘要： A solid-state image capturing device includes: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

摘要翻译： 固体摄像装置包括：半导体衬底，具有包括像素矩阵的光敏表面作为各自的光电转换器; 以及光致变色膜，其配置在向各光电转换体施加光的光路上，所述光致变色膜由光致变色材料制成，所述光致变色材料的光透射率随所施加的光的强度在预定波长范围内变化; 其中所述光透射率具有比从所述像素读取由所述像素产生的像素信号的一帧短的半值周期。

公开(公告)号：EP2372768A3

公开(公告)日：2013-06-12

申请号：EP11002388.4

申请日：2011-03-22

申请人： Sony Corporation

发明人： Izuha, Kyoko ,  Harada, Kouichi

IPC分类号： H01L27/146

CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H01L27/14685

摘要： A solid-state image capturing device includes: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

公开(公告)号：EP0509456A1

公开(公告)日：1992-10-21

申请号：EP92106443.2

申请日：1992-04-14

申请人： SONY CORPORATION

发明人： Harada, Kouichi

IPC分类号： H01L27/148 ,  H04N3/15

CPC分类号： H01L27/14831

摘要： A solid state image sensing device comprising first and second horizontal shift registers (3A,3B) of two-phase drive system, a smear drain region (21) disposed in an opposing relation to a first storage section (st₁) of the second horizontal shift register (3B) to which the first phase drive pulse (ΦH₁) of the second horizontal shift register (3B) is applied and a channel stop region (22) disposed in an opposing relation to a second storage section (st₂) of the second horizontal shift register (3B) to which the second phase drive pulse (ΦH₂) is applied, wherein a smear component is drained to the smear drain region (21), and a hole component is drained to the channel stop region (22) for thereby reducing a dark current of the second horizontal shift register (3B) to about that of the first horizontal shift register (3A). Therefore, a dark current in the horizontal shift register (3) of the solid state image sensing device can be reduced.

摘要翻译： 一种固态图像感测装置，包括两相驱动系统的第一和第二水平移位寄存器（3A，3B），与第二水平移位的第一存储部分（st1）相对设置的污迹漏区（21） 第二水平移位寄存器（3B）的第一相位驱动脉冲（PHI H1）被施加到的寄存器（3B）和与第二水平移位寄存器（3B）的第二存储区段（st2）相对置的通道停止区域（22） 水平移位寄存器（3B），其中施加有第二相位驱动脉冲（PHI H2），其中拖尾分量被排放到污迹漏区（21），并且孔分量被排出到通道停止区域（22），用于 从而将第二水平移位寄存器（3B）的暗电流减小到第一水平移位寄存器（3A）的暗电流。 因此，可以减小固体摄像装置的水平移位寄存器（3）中的暗电流。

公开(公告)号：EP2389001A3

公开(公告)日：2016-02-17

申请号：EP11165896.9

申请日：2011-05-12

申请人： Sony Corporation

发明人： Izuha, Kyoko ,  Harada, Kouichi

IPC分类号： H04N9/04 ,  H04N5/355 ,  H04N5/225

CPC分类号： H01L31/02162 ,  H01L27/14625 ,  H04N5/2254 ,  H04N5/35563 ,  H04N9/045 ,  H04N2209/045

摘要： A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

公开(公告)号：EP2413182A1

公开(公告)日：2012-02-01

申请号：EP11006038.1

申请日：2011-07-22

申请人： Sony Corporation

发明人： Izuha, Kyoko ,  Harada, Kouichi

IPC分类号： G02F1/15 ,  H01L27/146

CPC分类号： H04N5/3698 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14667

摘要： A solid-state imaging device includes: a semiconductor substrate (10) including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film (16) which is formed on the semiconductor substrate (10) on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode (15) which is formed below the electrochromic film; and an upper electrode (17) which is formed above the electrochromic film (16).

摘要翻译： 一种固态成像装置，包括：半导体衬底（10），包括根据以矩阵形状排列的像素分割并形成有光电转换部的光接收表面; 在从所述像素选择的像素的一部分中，在与所述光电转换部对应的光入射路径上形成在所述半导体基板（10）上的电致变色膜（16），并且具有从第一透射率向第二透射率 根据施加电压的透光率; 形成在电致变色膜下方的下电极（15） 以及形成在电致变色膜（16）上方的上电极（17）。

公开(公告)号：EP2073270A2

公开(公告)日：2009-06-24

申请号：EP08021947.0

申请日：2008-12-17

申请人： Sony Corporation

发明人： Hirota, Isao ,  Harada, Kouichi ,  Karasawa, Nobuhiro ,  Maruyama, Yasushi ,  Nitta, Yoshikazu ,  Terakago, Hiroyuki ,  Takashima, Hajime ,  Nomura, Hideo

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

摘要： A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.

摘要翻译： 固态成像装置包括形成在具有照射光的第一基板表面侧的基板上的像素单元和形成元件的第二基板表面侧，并且被相邻单元组分隔开， 元素分离层，或者以多个像素单元为单位。 每个像素单元具有形成在第一基板表面侧上的第一导电阱和形成在第二基板表面侧上的第二导电阱。 第一导电孔从第一基板表面侧接收光，并且具有用于所接收的光的光电转换功能和电荷累积功能。 在第二导电孔中形成检测第一导电阱中的累积电荷并具有阈值调制功能的晶体管。

公开(公告)号：EP2073270B1

公开(公告)日：2014-03-19

申请号：EP08021947.0

申请日：2008-12-17

申请人： Sony Corporation

发明人： Hirota, Isao ,  Harada, Kouichi ,  Karasawa, Nobuhiro ,  Maruyama, Yasushi ,  Nitta, Yoshikazu ,  Terakago, Hiroyuki ,  Takashima, Hajime ,  Nomura, Hideo

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

公开(公告)号：EP2073270A3

公开(公告)日：2012-05-16

申请号：EP08021947.0

申请日：2008-12-17

申请人： Sony Corporation

发明人： Hirota, Isao ,  Harada, Kouichi ,  Karasawa, Nobuhiro ,  Maruyama, Yasushi ,  Nitta, Yoshikazu ,  Terakago, Hiroyuki ,  Takashima, Hajime ,  Nomura, Hideo

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

摘要： A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.

公开(公告)号：EP2389001A2

公开(公告)日：2011-11-23

申请号：EP11165896.9

申请日：2011-05-12

申请人： Sony Corporation

发明人： Izuha, Kyoko ,  Harada, Kouichi

IPC分类号： H04N9/04

CPC分类号： H01L31/02162 ,  H01L27/14625 ,  H04N5/2254 ,  H04N5/35563 ,  H04N9/045 ,  H04N2209/045

摘要： A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

摘要翻译： 固态成像装置包括：半导体基板，其具有以形成在其上的光电二极管排列成矩阵的红色，绿色，蓝色和白色像素的受光面; 在半导体基板上形成的红外，绿色和蓝色像素的各个形成区域的光电二极管的入射路径分别形成在红色，绿色和蓝色波长区域上的彩色滤光片; 以及在至少一些白色像素的形成区域中的光入射路径中的光入射路径中形成的光致变色膜，并且包含光反射材料，所述光致变色材料响应于预定波长区域中的入射光强度而变化， 其中光致变色膜的透光率的半个周期短于一帧，作为在像素中获得的像素信号相对于所有像素读出的周期。

公开(公告)号：EP0509456B1

公开(公告)日：1998-07-08

申请号：EP92106443.2

申请日：1992-04-14

申请人： SONY CORPORATION

发明人： Harada, Kouichi

IPC分类号： H01L27/148 ,  H04N3/15

CPC分类号： H01L27/14831