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公开(公告)号:EP3996138A1
公开(公告)日:2022-05-11
申请号:EP20835254.2
申请日:2020-05-06
摘要: An imaging element of the present disclosure includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22 that are stacked, in which a protection layer 23B including an inorganic oxide, and an inorganic oxide semiconductor material layer 23C are formed from side of the photoelectric conversion layer directly below the photoelectric conversion layer 23A.