公开(公告)号：EP4131429A1

公开(公告)日：2023-02-08

申请号：EP21774140.4

申请日：2021-03-26

申请人： Sony Semiconductor Solutions Corporation

发明人： MATSUMOTO, Akira ,  ZAITSU, Koichiro ,  NISHIDA, Keiji ,  NISHIDA, Mizuki ,  IZUKASHI, Kazutaka ,  ITO, Daisuke ,  MIYOSHI, Yasufumi ,  YAMAMOTO, Junpei ,  TANAKA, Yusuke ,  HAMAMOTO, Yasushi

IPC分类号： H01L31/10 ,  H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/76 ,  H01L27/146 ,  H04N5/369

摘要： An imaging device (1) includes a plurality of imaging elements (100), wherein each of the plurality of imaging elements includes: a plurality of pixels (300a, 300b) containing impurities of a first conductivity type; an element separation wall (310) surrounding the plurality of pixels and provided so as to penetrate a semiconductor substrate (10); an on-chip lens (200) provided above a light receiving surface (10a) of the semiconductor substrate so as to be shared by the plurality of pixels; and a first separation portion (304) provided in a region surrounded by the element separation wall and separating the plurality of pixels, the first separation portion is provided so as to extend in a thickness direction of the semiconductor substrate, and a first diffusion region (306) containing impurities of a second conductivity type opposite to the first conductivity type is provided in a region positioned around the first separation portion and extending in the thickness direction of the semiconductor substrate.

公开(公告)号：EP3993040A1

公开(公告)日：2022-05-04

申请号：EP20833490.4

申请日：2020-06-26

申请人： Sony Semiconductor Solutions Corporation

发明人： NAKAZAWA, Keiichi ,  ZAITSU, Koichiro ,  FUJII, Nobutoshi ,  HIURA, Yohei ,  MORI, Shigetaka ,  OKAMOTO, Shintaro ,  OHSHIMA, Keiji ,  MANDA, Shuji ,  YAMAMOTO, Junpei ,  YUGA, Yui ,  MIYAKE, Shinichi ,  KAMBE, Tomoki ,  OGATA, Ryo ,  MIYAJI, Tatsuki ,  NAKAGAWA, Shinji ,  YAMASHITA, Hirofumi ,  HAMAMOTO, Yasushi ,  KIMIZUKA, Naohiko

IPC分类号： H01L27/146

摘要： There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.