公开(公告)号：EP4131429A1

公开(公告)日：2023-02-08

申请号：EP21774140.4

申请日：2021-03-26

申请人： Sony Semiconductor Solutions Corporation

发明人： MATSUMOTO, Akira ,  ZAITSU, Koichiro ,  NISHIDA, Keiji ,  NISHIDA, Mizuki ,  IZUKASHI, Kazutaka ,  ITO, Daisuke ,  MIYOSHI, Yasufumi ,  YAMAMOTO, Junpei ,  TANAKA, Yusuke ,  HAMAMOTO, Yasushi

IPC分类号： H01L31/10 ,  H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/76 ,  H01L27/146 ,  H04N5/369

摘要： An imaging device (1) includes a plurality of imaging elements (100), wherein each of the plurality of imaging elements includes: a plurality of pixels (300a, 300b) containing impurities of a first conductivity type; an element separation wall (310) surrounding the plurality of pixels and provided so as to penetrate a semiconductor substrate (10); an on-chip lens (200) provided above a light receiving surface (10a) of the semiconductor substrate so as to be shared by the plurality of pixels; and a first separation portion (304) provided in a region surrounded by the element separation wall and separating the plurality of pixels, the first separation portion is provided so as to extend in a thickness direction of the semiconductor substrate, and a first diffusion region (306) containing impurities of a second conductivity type opposite to the first conductivity type is provided in a region positioned around the first separation portion and extending in the thickness direction of the semiconductor substrate.