公开(公告)号：EP3998642A1

公开(公告)日：2022-05-18

申请号：EP20840851.8

申请日：2020-03-30

申请人： Sony Semiconductor Solutions Corporation

发明人： HAMASAKI, Takahiro ,  NAGAHIRO, Koji ,  OHRI, Hiroyuki ,  MIYATA, Satoe ,  MIURA, Takahiro ,  YOSHIMURA, Hisao

IPC分类号： H01L31/10 ,  H01L27/146

摘要： A photodetector including a plurality of photoelectric conversion sections that is provided to a semiconductor substrate. The photoelectric conversion sections each include a first region of a first electrical conduction type that is provided on a first surface side of the semiconductor substrate, a second region of a second electrical conduction type that is provided on a second surface side of the semiconductor substrate opposite to the first surface, a third region of a third electrical conduction type that is provided in a region between the first region and the second region of the semiconductor substrate, a first electrode that is electrically coupled to the first region from the first surface side, and a second electrode that is electrically coupled to the second region from the second surface side. The third region absorbs incident light.

公开(公告)号：EP3998641A1

公开(公告)日：2022-05-18

申请号：EP20840487.1

申请日：2020-03-30

申请人： Sony Semiconductor Solutions Corporation

发明人： HAMASAKI, Takahiro ,  TAKASHINO, Hiroyuki ,  NAGAHIRO, Koji ,  OHRI, Hiroyuki ,  MIYATA, Satoe ,  MIURA, Takahiro ,  YOSHIMURA, Hisao

IPC分类号： H01L31/10 ,  H01L27/146

摘要： A photodetector according to an embodiment of the present disclosure including a plurality of photoelectric conversion sections that is provided to a semiconductor substrate. The photoelectric conversion sections each include a first region of a first electrical conduction type that is provided on a first surface side of the semiconductor substrate, a second region of a second electrical conduction type that is provided on a second surface side of the semiconductor substrate opposite to the first surface, a third region of a third electrical conduction type that is provided in a region between the first region and the second region of the semiconductor substrate, a first electrode that extends from the second surface in a thickness direction of the semiconductor substrate, a pixel separation layer having an insulation property, and a second electrode that is electrically coupled to the second region from the second surface side. The third region absorbs incident light. The first electrode is electrically coupled to the first region on a bottom surface. The pixel separation layer is provided to a side surface of the first electrode.