公开(公告)号：EP3696522A1

公开(公告)日：2020-08-19

申请号：EP18866673.9

申请日：2018-08-24

申请人： Sony Semiconductor Solutions Corporation

发明人： NISHINO, Tatsuki ,  HIYAMA, Hiroki ,  MATSUMOTO, Shizunori ,  MIURA, Takahiro ,  MIYANOHARA, Akihiko ,  MATSUMOTO, Tomohiro

IPC分类号： G01J1/42 ,  G01S7/486 ,  H01L31/10 ,  H01L31/107 ,  H04N5/361 ,  H04N5/374

摘要： To control an excess bias to an appropriate value in a light detection device.
A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

公开(公告)号：EP4228248A1

公开(公告)日：2023-08-16

申请号：EP21877420.6

申请日：2021-09-28

申请人： Sony Semiconductor Solutions Corporation

发明人： SUZUKI, Atsushi ,  MIURA, Takahiro ,  MURAMATSU, Yoshinori ,  MATSUMOTO, Shizunori

IPC分类号： H04N5/3745 ,  G01T1/24 ,  G01T7/00 ,  H01L27/144 ,  H01L27/146 ,  H04N5/32 ,  H04N5/374

摘要： Provided is an imaging device with low noise and a high dynamic range.
An imaging device includes: a conversion unit that converts an incident electromagnetic wave into a charge; a first capacitor that accumulates the charge when a voltage corresponding to the charge is equal to or lower than a predetermined threshold; a second capacitor that accumulates the charge when the voltage exceeds the threshold; a voltage conversion circuit that converts the charges accumulated in the first capacitor and the second capacitor into voltages; a first storage unit that stores a voltage corresponding to the accumulated charge in the first capacitor after a lapse of a first period since the first capacitor has started accumulating the charge; and a second storage unit that stores a voltage corresponding to the accumulated charges in the first capacitor and the second capacitor after a lapse of a second period longer than the first period since the first capacitor has started accumulating the charge.

公开(公告)号：EP3998642A1

公开(公告)日：2022-05-18

申请号：EP20840851.8

申请日：2020-03-30

申请人： Sony Semiconductor Solutions Corporation

发明人： HAMASAKI, Takahiro ,  NAGAHIRO, Koji ,  OHRI, Hiroyuki ,  MIYATA, Satoe ,  MIURA, Takahiro ,  YOSHIMURA, Hisao

IPC分类号： H01L31/10 ,  H01L27/146

摘要： A photodetector including a plurality of photoelectric conversion sections that is provided to a semiconductor substrate. The photoelectric conversion sections each include a first region of a first electrical conduction type that is provided on a first surface side of the semiconductor substrate, a second region of a second electrical conduction type that is provided on a second surface side of the semiconductor substrate opposite to the first surface, a third region of a third electrical conduction type that is provided in a region between the first region and the second region of the semiconductor substrate, a first electrode that is electrically coupled to the first region from the first surface side, and a second electrode that is electrically coupled to the second region from the second surface side. The third region absorbs incident light.

公开(公告)号：EP3998641A1

公开(公告)日：2022-05-18

申请号：EP20840487.1

申请日：2020-03-30

申请人： Sony Semiconductor Solutions Corporation

发明人： HAMASAKI, Takahiro ,  TAKASHINO, Hiroyuki ,  NAGAHIRO, Koji ,  OHRI, Hiroyuki ,  MIYATA, Satoe ,  MIURA, Takahiro ,  YOSHIMURA, Hisao

IPC分类号： H01L31/10 ,  H01L27/146

摘要： A photodetector according to an embodiment of the present disclosure including a plurality of photoelectric conversion sections that is provided to a semiconductor substrate. The photoelectric conversion sections each include a first region of a first electrical conduction type that is provided on a first surface side of the semiconductor substrate, a second region of a second electrical conduction type that is provided on a second surface side of the semiconductor substrate opposite to the first surface, a third region of a third electrical conduction type that is provided in a region between the first region and the second region of the semiconductor substrate, a first electrode that extends from the second surface in a thickness direction of the semiconductor substrate, a pixel separation layer having an insulation property, and a second electrode that is electrically coupled to the second region from the second surface side. The third region absorbs incident light. The first electrode is electrically coupled to the first region on a bottom surface. The pixel separation layer is provided to a side surface of the first electrode.