公开(公告)号：EP3696522A1

公开(公告)日：2020-08-19

申请号：EP18866673.9

申请日：2018-08-24

申请人： Sony Semiconductor Solutions Corporation

发明人： NISHINO, Tatsuki ,  HIYAMA, Hiroki ,  MATSUMOTO, Shizunori ,  MIURA, Takahiro ,  MIYANOHARA, Akihiko ,  MATSUMOTO, Tomohiro

IPC分类号： G01J1/42 ,  G01S7/486 ,  H01L31/10 ,  H01L31/107 ,  H04N5/361 ,  H04N5/374

摘要： To control an excess bias to an appropriate value in a light detection device.
A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.