公开(公告)号：EP4027196A1

公开(公告)日：2022-07-13

申请号：EP20860035.3

申请日：2020-09-03

申请人： Sony Semiconductor Solutions Corporation ,  Sony Group Corporation

发明人： MURAKAWA, Yusuke ,  TOGASHI, Hideaki ,  NAGASHIMA, Yoshito ,  FURUKAWA, Akira ,  ANDO, Yoshihiro ,  AKUTAGAWA, Yasumasa ,  MINODA, Taku ,  IWASHITA, Hiroki ,  NIWA, Takahito ,  NISHIDA, Sho ,  ISHIMARU, Mikio

IPC分类号： G03B11/00 ,  G02B7/34 ,  G03B13/36 ,  H01L27/146 ,  H01L27/30 ,  H04N5/369

摘要： An error is reduced in phase difference detection of an imaging element including a phase difference pixel configured by arranging an on-chip lens in common for a pair of pixels.
The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The pixel includes a photoelectric conversion unit configured to perform photoelectric conversion in accordance with incident light, and a charge transfer unit configured to transfer a charge generated by the photoelectric conversion. The individual on-chip lens is arranged for each pixel and individually collects incident light. The phase difference pixels each include the photoelectric conversion unit and the charge transfer unit, and are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. The charge transfer units of the plurality of phase difference pixels are arranged in a region between the common on-chip lens and the individual on-chip lens.