-
公开(公告)号：EP4027196A1
公开(公告)日：2022-07-13
申请号：EP20860035.3
申请日：2020-09-03
发明人： MURAKAWA, Yusuke , TOGASHI, Hideaki , NAGASHIMA, Yoshito , FURUKAWA, Akira , ANDO, Yoshihiro , AKUTAGAWA, Yasumasa , MINODA, Taku , IWASHITA, Hiroki , NIWA, Takahito , NISHIDA, Sho , ISHIMARU, Mikio
摘要： An error is reduced in phase difference detection of an imaging element including a phase difference pixel configured by arranging an on-chip lens in common for a pair of pixels.
The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The pixel includes a photoelectric conversion unit configured to perform photoelectric conversion in accordance with incident light, and a charge transfer unit configured to transfer a charge generated by the photoelectric conversion. The individual on-chip lens is arranged for each pixel and individually collects incident light. The phase difference pixels each include the photoelectric conversion unit and the charge transfer unit, and are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. The charge transfer units of the plurality of phase difference pixels are arranged in a region between the common on-chip lens and the individual on-chip lens.-
公开(公告)号：EP4106322A1
公开(公告)日：2022-12-21
申请号：EP21753075.7
申请日：2021-01-28
发明人： HANADA, Takuya , TSUCHIMOTO, Koya , NAKAMURA, Makoto , NODA, Yuki , MURAKAWA, Yusuke , KITANO, Shin
IPC分类号： H04N5/357 , H04N5/3745
摘要： A solid-state imaging device (200) is provided with a plurality of photoelectric conversion elements (311), a plurality of current-voltage conversion circuits (320), a plurality of address event detection circuits (231), first ground wiring (424), and second ground wiring (421). The plurality of photoelectric conversion elements (311) is arranged side by side in a first region. The plurality of current-voltage conversion circuits (320) converts currents output from the plurality of photoelectric conversion elements (311) into voltages, respectively. The plurality of address event detection circuits (231) detects changes in voltages output from the plurality of current-voltage conversion circuits (320), respectively. The first ground wiring (424) is provided in a second region located outside the first region, and supplies first ground potential to the plurality of photoelectric conversion elements (311). The second ground wiring (421) is provided in the second region and supplies second ground potential having a voltage value different from that of the first ground potential to the plurality of current-voltage conversion circuits (320).
-
公开(公告)号：EP4102568A1
公开(公告)日：2022-12-14
申请号：EP21750799.5
申请日：2021-01-22
发明人： NODA, Yuki , MURAKAWA, Yusuke , HANADA, Takuya , NAKAMURA, Makoto , TSUCHIMOTO, Koya , KITANO, Shin
IPC分类号： H01L27/146 , H04N5/351 , H04N5/3745
摘要： A solid-state imaging device (200) according to the present disclosure includes a light-receiving substrate (201), a circuit board (202), and a plurality of first connections (270). The light-receiving substrate (201) includes a plurality of light-receiving circuits (211) provided with photoelectric conversion elements. The circuit board (202) is directly bonded to the light-receiving substrate (201) and includes a plurality of address event detection circuits (231) that detects individual changes in voltages output from the photoelectric conversion elements of the plurality of light-receiving circuits (211). The plurality of first connections (270) is provided at a joint (203) between the light-receiving substrate (201) and the circuit board (202) to electrically connect the light-receiving circuits (211) and the address event detection circuits (231) corresponding to each other.
-
公开(公告)号：EP4099686A1
公开(公告)日：2022-12-07
申请号：EP21747912.0
申请日：2021-01-15
发明人： MURAKAWA, Yusuke , KITANO, Shin , NAKAMURA, Makoto , HANADA, Takuya , TSUCHIMOTO, Koya , NODA, Yuki
IPC分类号： H04N5/378 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L27/146 , H04N5/351
摘要： A solid-state imaging element according to the present disclosure includes a plurality of first photoelectric conversion elements, a plurality of second photoelectric conversion elements, a plurality of current-voltage conversion circuits (320 and 320A), and a plurality of address event detection circuits (231 and 231A). The plurality of first photoelectric conversion elements is arranged side by side in a first region. The plurality of second photoelectric conversion elements is arranged side by side in a second region adjacent to the first region. The plurality of current-voltage conversion circuits (320 and 320A) each converts currents output from the plurality of first photoelectric conversion elements or the plurality of second photoelectric conversion elements into voltages. The plurality of address event detection circuits (231 and 231A) each detects a change in the voltages output from the plurality of current-voltage conversion circuits (320 and 320A). At least either the current-voltage conversion circuits (320A) or the address event detection circuits (231A) connected to the second photoelectric conversion elements prevent output of signals based on the currents output from the second photoelectric conversion elements.
-
公开(公告)号：EP4105968A1
公开(公告)日：2022-12-21
申请号：EP21753762.0
申请日：2021-02-02
发明人： NAKAMURA, Makoto , KITANO, Shin , MURAKAWA, Yusuke , TSUCHIMOTO, Koya , HANADA, Takuya , NODA, Yuki
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/522 , H01L27/146 , H04N5/369
摘要： A solid-state imaging element (200) according to the present disclosure is provided with a first substrate (light reception chip 201) and a second substrate (detection chip 202). The first substrate (light reception chip 201) is provided with a photodiode (221) that photoelectrically converts incident light to generate a photocurrent. The second substrate (detection chip 202) is provided with a luminance change detection circuit (current-voltage conversion circuit 310) that detects a change in luminance of the incident light on the basis of a voltage signal converted by a conversion circuit (current-voltage conversion circuit 310) that converts the photocurrent into the voltage signal, and is bonded to the first substrate (light reception chip 201). A light shielding unit (light shielding film 700) provided in at least any one of the first substrate (light reception chip 201) or the second substrate (detection chip 202) and shields light between an active element (transistor TR) provided in the second substrate (detection chip 202) and the photodiode (221) is included.
-
-
-
-
搜索结果
5 条记录 (耗时 0.013 秒)
