公开(公告)号：EP4131386A1

公开(公告)日：2023-02-08

申请号：EP21778942.9

申请日：2021-03-24

申请人： Sony Semiconductor Solutions Corporation ,  Sony Group Corporation

发明人： JOEI, Masahiro ,  HIRATA, Shintarou ,  YUKAWA, Tomiyuki ,  SUZUKI, Ryosuke ,  NAKANO, Hiroshi ,  HAYASHI, Toshihiko ,  TAKAGUCHI, Ryotaro ,  YAGI, Iwao ,  MURATA, Kenichi

IPC分类号： H01L27/18

摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.