公开(公告)号：EP4131380A1

公开(公告)日：2023-02-08

申请号：EP21778940.3

申请日：2021-03-24

申请人： Sony Group Corporation ,  Sony Semiconductor Solutions Corporation

发明人： NAKANO, Hiroshi ,  HIRATA, Shintarou ,  MUROYAMA, Masakazu ,  YAMAZAKI, Yusuke ,  MORIWAKI, Toshiki ,  IINO, Yoichiro ,  KURISHIMA, Kazunori ,  MURAKAMI, Yosuke

IPC分类号： H01L27/146 ,  H04N5/359 ,  H04N5/374

摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The photoelectric conversion layer includes an organic material. The semiconductor layer includes a first layer and a second layer that are stacked in order from the first electrode and second electrode side between the first electrode and second electrode and the photoelectric conversion layer. The first layer has a larger value for C5s indicating a contribution ratio of a 5s orbital to a conduction band minimum than a value of the second layer for C5s. The second layer has a larger value for E VO indicating oxygen deficiency generation energy or a larger value for E VN indicating nitrogen deficiency generation energy than a value of the first layer for E VO or E VN .

公开(公告)号：EP4131386A1

公开(公告)日：2023-02-08

申请号：EP21778942.9

申请日：2021-03-24

申请人： Sony Semiconductor Solutions Corporation ,  Sony Group Corporation

发明人： JOEI, Masahiro ,  HIRATA, Shintarou ,  YUKAWA, Tomiyuki ,  SUZUKI, Ryosuke ,  NAKANO, Hiroshi ,  HAYASHI, Toshihiko ,  TAKAGUCHI, Ryotaro ,  YAGI, Iwao ,  MURATA, Kenichi

IPC分类号： H01L27/18

摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.

公开(公告)号：EP3996138A1

公开(公告)日：2022-05-11

申请号：EP20835254.2

申请日：2020-05-06

申请人： Sony Group Corporation

发明人： MORIWAKI, Toshiki ,  YAMAZAKI, Yuusuke ,  NAKANO, Hiroshi

IPC分类号： H01L27/146 ,  H01L27/30 ,  H01L31/10 ,  H01L51/42 ,  H04N5/363 ,  H04N5/369

摘要： An imaging element of the present disclosure includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22 that are stacked, in which a protection layer 23B including an inorganic oxide, and an inorganic oxide semiconductor material layer 23C are formed from side of the photoelectric conversion layer directly below the photoelectric conversion layer 23A.

公开(公告)号：EP3979348A1

公开(公告)日：2022-04-06

申请号：EP20812791.0

申请日：2020-04-29

申请人： Sony Group Corporation

发明人： IINO, Yoichiro ,  NAKANO, Hiroshi ,  MORIWAKI Toshiki

IPC分类号： H01L51/42 ,  H01L31/10 ,  H01L27/146 ,  H04N5/369

摘要： An imaging element includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer 23B contains aluminum (Al) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.