Patent search ap:("Spin Memory Page Inc.") AND inv:"PINARBASI

1.

发明公开
PRECESSIONAL SPIN CURRENT STRUCTURE WITH HIGH IN-PLANE MAGNETIZATION FOR MRAM 审中-公开

公开(公告)号：EP3583633A1

公开(公告)日：2019-12-25

申请号：EP18761708.9

申请日：2018-01-22

Applicant: Spin Memory, Inc.

Inventor： PINARBASI, Mustafa Michael , KARDASZ, Bartlomiej Adam

IPC: H01L43/02 , H01L43/08 , H01L43/10

2.

发明公开
PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAYER FOR MRAM 审中-公开

公开(公告)号：EP3583599A1

公开(公告)日：2019-12-25

申请号：EP18761833.5

申请日：2018-01-22

Applicant: Spin Memory, Inc.

Inventor： KARDASZ, Bartlomiej Adam , PINARBASI, Mustafa Michael

IPC: G11C11/16 , H01L43/08 , H01F10/32

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