公开(公告)号：EP0986102A3

公开(公告)日：2002-03-06

申请号：EP99400965.2

申请日：1999-04-20

申请人： Sullivan, Thomas Milton

发明人： Sullivan, Thomas Milton

IPC分类号： H01L23/15 ,  H01L21/04

CPC分类号： H01L28/55 ,  G11B5/00 ,  G11B5/10 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/48 ,  G11B5/4833 ,  G11B5/72 ,  G11B5/7315 ,  G11B5/74 ,  G11B5/82 ,  G11B17/02 ,  G11B17/038 ,  G11B21/16 ,  G11B25/043 ,  G11B33/02 ,  H01L21/0445 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/1433 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/31678 ,  H01L2924/00

摘要： A substrate made of polycrystalline βSiC and having an essentially pore free surface is disclosed. The substrate is adapted for use as a wafer component to support different thinfilms as part of manufacturing for discrete or integrated circuit electronic devices. The substrate comprises a polycrystalline silicon carbide outer surface with {111} crystal planes exposed on the working surface, the outer surface is essentially pore free or without exposed pores, scratches, steps or other such depressions or discontinuities on the surface of the substrate having at least one dimension larger than 2.54 microns, and no non-stoichiometric silicon or carbon other than that which may be residual from the process of making silicon carbide ceramic material.

摘要翻译： 公开了由多晶βSiC制成并具有基本无孔表面的基材。 衬底适合用作晶片部件以支撑不同的薄膜作为用于分立或集成电路电子器件的制造的一部分。 衬底包括暴露在工作表面上的具有{111}晶面的多晶碳化硅外表面，外表面基本无孔或在衬底表面上没有暴露的孔，划痕，台阶或其他这样的凹陷或不连续处， 至少一个尺寸大于2.54微米，并且除了制造碳化硅陶瓷材料的过程中可能残留的非化学计量的硅或碳以外，不存在非化学计量的硅或碳。

公开(公告)号：EP0986102A2

公开(公告)日：2000-03-15

申请号：EP99400965.2

申请日：1999-04-20

申请人： Sullivan, Thomas Milton

发明人： Sullivan, Thomas Milton

IPC分类号： H01L23/15

CPC分类号： H01L28/55 ,  G11B5/00 ,  G11B5/10 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/48 ,  G11B5/4833 ,  G11B5/72 ,  G11B5/7315 ,  G11B5/74 ,  G11B5/82 ,  G11B17/02 ,  G11B17/038 ,  G11B21/16 ,  G11B25/043 ,  G11B33/02 ,  H01L21/0445 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/1433 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/31678 ,  H01L2924/00

摘要： A substrate made of polycrystalline βSiC and having an essentially pore free surface is disclosed. The substrate is adapted for use as a wafer component to support different thinfilms as part of manufacturing for discrete or integrated circuit electronic devices. The substrate comprises a polycrystalline silicon carbide outer surface with {111} crystal planes exposed on the working surface, the outer surface is essentially pore free or without exposed pores, scratches, steps or other such depressions or discontinuities on the surface of the substrate having at least one dimension larger than 2.54 microns, and no non-stoichiometric silicon or carbon other than that which may be residual from the process of making silicon carbide ceramic material.

公开(公告)号：EP0357176B1

公开(公告)日：1994-07-06

申请号：EP89304258.0

申请日：1989-04-27

申请人： Sullivan, Thomas Milton

发明人： Sullivan, Thomas Milton

IPC分类号： C04B35/58 ,  C04B35/56 ,  C04B35/64 ,  D01F9/10

CPC分类号： C04B35/65 ,  C04B35/571 ,  C04B35/58 ,  C04B35/58014 ,  C04B35/58028 ,  C04B35/58042 ,  C04B35/589 ,  C04B35/591 ,  C04B35/62295 ,  C04B35/645 ,  Y10S264/11

公开(公告)号：EP0357176A3

公开(公告)日：1991-01-30

申请号：EP89304258.0

申请日：1989-04-27

申请人： Sullivan, Thomas Milton

发明人： Sullivan, Thomas Milton

IPC分类号： C04B35/58 ,  C04B35/56 ,  C04B35/64 ,  D01F9/10

CPC分类号： C04B35/65 ,  C04B35/571 ,  C04B35/58 ,  C04B35/58014 ,  C04B35/58028 ,  C04B35/58042 ,  C04B35/589 ,  C04B35/591 ,  C04B35/62295 ,  C04B35/645 ,  Y10S264/11

摘要： A process for the production of high-performance ceramics and ceramic precursors is disclosed which comprises reacting an organometallic precursor with a reactant in a supercritical fluid and exposing the organometallic prod­uct to a ceramic material. A critical temperature (or pressure) is required to produce the supercritical fluid which is the maximum temperature (or pressure) at which a gas or vapor may be liquified by the application of a critical pressure (or temperature). Nitrogen-containing ceramics such as nitrides, oxynitrides and carbonnitrides, and carbide ceramics are produced by reacting precursors such as alkyl halosilanes and dialkyl silanes in the presence of a supercritical fluid such as nitrogen, hydrogen, ammonia and mixtures thereof for the nitrogen-containing ceramics and in the presence of hydrocarbons, hydrogen or mixtures thereof for the carbide ceramics. The high performance ceramics produced find particular application in the automobile industry.

公开(公告)号：EP0357176A2

公开(公告)日：1990-03-07

申请号：EP89304258.0

申请日：1989-04-27

申请人： Sullivan, Thomas Milton

发明人： Sullivan, Thomas Milton

IPC分类号： C04B35/58 ,  C04B35/56 ,  C04B35/64 ,  D01F9/10

CPC分类号： C04B35/65 ,  C04B35/571 ,  C04B35/58 ,  C04B35/58014 ,  C04B35/58028 ,  C04B35/58042 ,  C04B35/589 ,  C04B35/591 ,  C04B35/62295 ,  C04B35/645 ,  Y10S264/11

摘要： A process for the production of high-performance ceramics and ceramic precursors is disclosed which comprises reacting an organometallic precursor with a reactant in a supercritical fluid and exposing the organometallic prod­uct to a ceramic material. A critical temperature (or pressure) is required to produce the supercritical fluid which is the maximum temperature (or pressure) at which a gas or vapor may be liquified by the application of a critical pressure (or temperature).
Nitrogen-containing ceramics such as nitrides, oxynitrides and carbonnitrides, and carbide ceramics are produced by reacting precursors such as alkyl halosilanes and dialkyl silanes in the presence of a supercritical fluid such as nitrogen, hydrogen, ammonia and mixtures thereof for the nitrogen-containing ceramics and in the presence of hydrocarbons, hydrogen or mixtures thereof for the carbide ceramics. The high performance ceramics produced find particular application in the automobile industry.

摘要翻译： 公开了一种用于生产高性能陶瓷和陶瓷前体的方法，其包括使有机金属前体与超临界流体中的反应物反应并将有机金属产物暴露于陶瓷材料。 需要临界温度（或压力）以产生超临界流体，超临界流体是通过施加临界压力（或温度）使气体或蒸汽液化的最高温度（或压力）。 通过使诸如烷基卤代硅烷和二烷基硅烷的前体在氮，氢，氨等超临界流体及其混合物的存在下使含氮陶瓷反应，制备氮化物，氮氧化物和碳氮化物等含氮陶瓷，以及碳化物陶瓷。 并且在碳氢化合物，氢气或其混合物的存在下，用于碳化物陶瓷。 制造的高性能陶瓷在汽车工业中得到了应用。