公开(公告)号：EP1754811A1

公开(公告)日：2007-02-21

申请号：EP05730635.9

申请日：2005-04-15

申请人： Sumitomo Electric Industries, Ltd. ,  Sasaki, Takatomo

发明人： SASAKI, Takatomo ,  MORI, Yusuke ,  YOSHIMURA, Masashi ,  KAWAMURA, Fumio ,  NAKAHATA, Seiji, Itami Works of SUMITOMO E.I. LTD ,  HIROTA, Ryu, Itami Works of SUMITOMO E.I. LTD

IPC分类号： C30B29/38 ,  C30B9/10 ,  C30B11/06 ,  H01L33/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  H01L33/0075 ,  H01L33/32

摘要： A method of manufacturing a group III-nitride crystal includes the steps of: preparing a seed crystal (10), and growing a first group III-nitride crystal (21) on the seed crystal (10) by liquid phase method; wherein in the step of growing a first group III-nitride crystal (21) on the seed crystal (10), rate of crystal growth V H in a direction parallel to a main surface (10h) of the seed crystal (10) is higher than rate of crystal growth V V in a direction vertical to the main surface (10h) of the seed crystal (10). By the manufacturing method, a group III-nitride crystal is obtained, of which dislocation density of a surface parallel to the main surface (10h) of the seed crystal (10) is as low as at most 5 × 10 6 /cm 2 .

摘要翻译： 制备III族氮化物晶体的方法包括以下步骤：制备晶种（10），并通过液相法在晶种（10）上生长第一III族氮化物晶体（21）; 其特征在于，在晶种（10）上生长第一III族氮化物晶体（21）的步骤中，与晶种（10）的主表面（10h）平行的方向的晶体生长速度V H高于 在垂直于晶种（10）的主表面（10h）的方向上的晶体生长速率V V。 通过该制造方法，得到与晶种（10）的主面（10h）平行的面的位错密度为5×10 6 / cm 2以下的III族氮化物晶体。

公开(公告)号：EP1754810A1

公开(公告)日：2007-02-21

申请号：EP05727904.4

申请日：2005-03-30

申请人： Sumitomo Electric Industries, Ltd. ,  Mori, Yusuke

发明人： SASAKI, Takatomo ,  MORI, Yusuke ,  YOSHIMURA, Masashi ,  KAWAMURA, Fumio ,  NAKAHATA, Seiji, c/o Itami Works ,  HIROTA, Ryu, c/o Itami Works

IPC分类号： C30B29/38 ,  C30B11/06 ,  H01L21/208 ,  H01L33/00 ,  H01S5/323

CPC分类号： C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy (11) containing at least a group III-metal element and an alkali metal element in a reactor (1), introducing a nitrogen-containing substance (14) in the reactor (1), dissolving the nitrogen-containing substance (14) in an alloy melt (13) in which the alloy (11) has been melted, and growing group III-nitride semiconductor crystal (15) is provided. The group III-nitride semiconductor crystal (15) attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

摘要翻译： 制备III族氮化物半导体晶体的方法包括以下步骤：在反应器（1）中容纳含有至少III族金属元素和碱金属元素的合金（11），引入含氮物质（14） 在反应器（1）中，将含氮物质（14）溶解在合金（11）熔融的合金熔体（13）中，生长III族氮化物半导体晶体（15）。 可以提供获得小吸收系数的III族氮化物半导体晶体（15）及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

公开(公告)号：EP1736572B1

公开(公告)日：2012-06-20

申请号：EP05721657.4

申请日：2005-03-30

申请人： Sumitomo Electric Industries, Ltd. ,  Mori, Yusuke

发明人： SASAKI, Takatomo ,  MORI, Yusuke ,  YOSHIMURA, Masashi ,  KAWAMURA, Fumio ,  HIROTA, Ryu c/o Itami Works of Sumitomo Electric Ind., Ltd. ,  NAKAHATA, Seiji c/o Itami Works of Sumitomo Electric Ind., Ltd.

IPC分类号： C30B29/40

CPC分类号： C30B9/08 ,  C30B9/00 ,  C30B11/00 ,  C30B11/06 ,  C30B29/403

摘要： A method for producing a group III nitride crystal substrate comprising a step for introducing an alkali metal element-containing substance (1), a group III element-containing substance (2) and a nitrogen element-containing substance (3) into a reaction container (51), a step for forming a melt (5) containing at least an alkali metal element, group III element and nitrogen element in the reaction container (51), and a step for growing a group III nitride crystal (6) from the melt (5) is characterized in that the alkali metal element-containing substance (1) is handled within a dry container (100) wherein the moisture concentration is controlled to 1.0 ppm or less at least during the step wherein the alkali metal element-containing substance (1) is introduced into the reaction container (51). Consequently, there can be obtained a group III nitride crystal substrate having a small light absorption coefficient. Also disclosed is a group III nitride semiconductor device.

公开(公告)号：EP1754810B1

公开(公告)日：2011-05-18

申请号：EP05727904.4

申请日：2005-03-30

申请人： Sumitomo Electric Industries, Ltd. ,  Mori, Yusuke

发明人： SASAKI, Takatomo ,  MORI, Yusuke ,  YOSHIMURA, Masashi ,  KAWAMURA, Fumio ,  NAKAHATA, Seiji, c/o Itami Works ,  HIROTA, Ryu, c/o Itami Works

IPC分类号： C30B29/40

CPC分类号： C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

摘要： Disclosed is a method for producing a group III nitride semiconductor crystal wherein an alloy (11) containing at least a group III metal element and an alkali metal element is put in a reaction container (1) and a nitrogen-containing substance (14) is introduced into the reaction container (1), so that the nitrogen-containing substance (14) is dissolved in an alloy melt (13) of the molten alloy (11) and there is grown a group III nitride semiconductor crystal (15). By this method, there can be efficiently obtained a group III nitride semiconductor crystal (15) having a low light absorption coefficient. Also disclosed is a group III nitride semiconductor device having a high luminous intensity.

公开(公告)号：EP1736572A1

公开(公告)日：2006-12-27

申请号：EP05721657.4

申请日：2005-03-30

申请人： Sumitomo Electric Industries, Ltd. ,  Mori, Yusuke

发明人： SASAKI, Takatomo ,  MORI, Yusuke ,  YOSHIMURA, Masashi ,  KAWAMURA, Fumio ,  HIROTA, Ryu ,  NAKAHATA, Seiji

IPC分类号： C30B29/38 ,  C30B9/10 ,  C30B11/06 ,  H01L21/208

CPC分类号： C30B9/08 ,  C30B9/00 ,  C30B11/00 ,  C30B11/06 ,  C30B29/403

摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance (1), a group III-element-containing substance (2) and a nitrogen-element-containing substance (3) into a reactor (51), forming a melt (5) containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor (51), and growing group III-nitride crystal (6) from the melt (5), and characterized by handling the alkali-metal-element-containing substance (1) in a drying container (100) in which moisture concentration is controlled to at most 1.0ppm at least in the step of introducing the alkali-metal-element-containing substance (1) into the reactor (51) is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

摘要翻译： 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质（1），含III族元素的物质（2）和含氮元素的物质（3 ）形成反应器（51），形成至少含有反应器（51）中的碱金属元素，第III族元素和氮元素的熔体（5），以及来自所述反应器（51）的生长III族氮化物晶体 熔融（5），其特征在于，在将水分浓度控制在1.0ppm以下的干燥容器（100）中处理含碱金属元素的物质（1），至少在引入碱金属 含有元素的物质（1）进入反应器（51）。 因此可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。