公开(公告)号：EP2577745A2

公开(公告)日：2013-04-10

申请号：EP11721926.1

申请日：2011-05-16

申请人： Suniva, Inc.

发明人： ROHATGI, Ajeet ,  YELUNDUR, Vijay ,  CHANDRASEKARAN, Vinodh ,  DAVIS, Hubert, Preston ,  DAMIANI, Ben

IPC分类号： H01L31/068 ,  H01L21/263 ,  H01L31/18 ,  H01L21/266 ,  H01L21/265

CPC分类号： H01L31/1804 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/266 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells and methods for their manufacture are disclosed. An example method may include providing a p-type doped silicon substrate and introducing n-type dopant to a first and second region of the front surface of the substrate by ion implantation so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to activate the dopant, drive the dopant into the substrate, produce a p-n junction, and form a selective emitter. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.

公开(公告)号：EP2609631A2

公开(公告)日：2013-07-03

申请号：EP11721938.6

申请日：2011-05-17

申请人： Suniva, Inc.

发明人： MEIER, Daniel ,  ROHATGI, Ajeet ,  CHANDRASEKARAN, Vinodh ,  YELUNDUR, Vijay ,  DAVIS, Hubert, Preston ,  DAMIANI, Ben

IPC分类号： H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/02363 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells and methods for their manufacture are disclosed. An example method may include fabricating an n-type silicon substrate and introducing n-type dopant to one or more first and second regions of the substrate so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to form a selective front surface field layer. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co- firing operation. The firing of the back contact may form a p+ emitter layer at the interface of the substrate and back contacts, thus forming a p-n junction at the interface of the emitter layer and the substrate. Associated solar cells are also provided.

公开(公告)号：EP2577748A2

公开(公告)日：2013-04-10

申请号：EP11721686.1

申请日：2011-05-17

申请人： Suniva, Inc.

发明人： ROHATGI, Ajeet ,  YELUNDUR, Vijay ,  DAVIS, Hubert, Preston ,  CHANDRASEKARAN, Vinodh ,  DAMIANI, Ben

IPC分类号： H01L31/18 ,  H01L31/068 ,  H01L21/265

CPC分类号： H01L31/1804 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected to a single high-temperature anneal cycle. Additional dopant atoms may be introduced for diffusion into the front surface of the substrate during the single anneal cycle. A selective emitter may be formed on the front surface of the substrate such that the one or more selective regions of the selective emitter layer are more heavily doped than the remainder of the selective emitter layer. Associated solar cells are also provided.

摘要翻译： 公开了太阳能电池及其制造方法。 示例性方法可以包括提供硅衬底并通过离子注入将掺杂剂引入衬底的前表面的一个或多个选择性区域。 可以对衬底进行单个高温退火循环。 在单个退火循环期间，可引入另外的掺杂剂原子用于扩散到衬底的前表面。 选择性发射极可以形成在衬底的前表面上，使得选择性发射极层的一个或多个选择性区域比选择性发射极层的其余部分更重掺杂。 还提供了相关的太阳能电池。