公开(公告)号：EP2440686A1

公开(公告)日：2012-04-18

申请号：EP10786646.9

申请日：2010-06-07

申请人： Synos Technology, Inc.

发明人： LEE, Sang, In

IPC分类号： C23C16/50

CPC分类号： C23C16/45551 ,  C01B21/076 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

摘要： A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.