公开(公告)号：EP3202515A4

公开(公告)日：2018-06-13

申请号：EP15845750

申请日：2015-09-29

申请人： MITSUBISHI MATERIALS CORP

发明人： SATO KENICHI ,  TATSUOKA SHO ,  YAMAGUCHI KENJI

IPC分类号： C23C16/02 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40

CPC分类号： B23B27/148 ,  B23B27/14 ,  B23B2224/28 ,  B23B2224/32 ,  B23B2224/36 ,  B23B2228/04 ,  B23B2228/36 ,  C23C14/0641 ,  C23C14/0664 ,  C23C16/0272 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/403 ,  C23C28/042 ,  C23C28/044 ,  C30B23/08 ,  C30B29/38

摘要： Provided is a surface-coated cutting tool in which a hard coating layer exhibits chipping resistance and peeling resistance under high-speed intermittent heavy cutting conditions. In the surface-coated cutting tool in which the surface of a tool body is coated with a lower layer including a TiCN layer having at least an NaCl type face-centered cubic crystal structure and an upper layer formed of a TiAlCN layer having a single phase crystal structure of NaCl type face-centered cubic crystals or a mixed phase crystal structure of NaCl type face-centered cubic crystals and hexagonal crystals, and is preferably further coated with an outermost surface layer including an Al 2 O 3 layer, when the layer of a complex nitride or complex carbonitride of Ti and Al is expressed by the composition formula: (Ti 1-x Al x ) (C y N 1-y ), the average amount Xave of Al in the total amount of Ti and Al and the average amount Yave of C in the total amount of C and N (both Xave and Yave are atomic ratios) respectively satisfy 0.60 ‰¤ Xave ‰¤ 0.95 and 0 ‰¤ Yave ‰¤ 0.005.

公开(公告)号：EP2971227B1

公开(公告)日：2017-11-15

申请号：EP14716739.9

申请日：2014-03-14

申请人： Si02 Medical Products, Inc.

发明人： JONES, Joseph A. ,  FELTS, John T. ,  GRESHAM, James Troy ,  LILLY, Brian Russell ,  FISK, Thomas E.

IPC分类号： C23C16/40 ,  C23C16/515 ,  C23C16/455 ,  A61L31/08 ,  A61L31/14 ,  A61M5/31 ,  A61M5/32 ,  C23C16/32 ,  C23C16/50 ,  C23C16/505 ,  C23C16/511

CPC分类号： C23C16/45523 ,  A61L31/088 ,  A61L31/14 ,  A61M5/28 ,  A61M5/3129 ,  A61M5/3134 ,  A61M5/3202 ,  A61M2005/3104 ,  A61M2005/3131 ,  C23C16/32 ,  C23C16/401 ,  C23C16/50 ,  C23C16/505 ,  C23C16/511 ,  C23C16/515

摘要： A method for coating a substrate surface such as a syringe part by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising an organosilicon precursor and optionally an oxidizing gas by providing plasma-forming energy adjacent to the substrate, thus forming a coating on the substrate surface by plasma enhanced chemical vapor deposition (PECVD). The plasma-forming energy is applied in a first phase as a first pulse at a first energy level followed by further treatment in a second phase at a second energy level lower than the first energy level. The lubricity, hydrophobicity and/or barrier properties of the coating are set by setting the ratio of the O2 to the organosilicon precursor in the gaseous reactant, and/or by setting the electric power used for generating the plasma.

公开(公告)号：EP3153253A1

公开(公告)日：2017-04-12

申请号：EP15188304.8

申请日：2015-10-05

申请人： General Electric Technology GmbH

发明人： Stankowski, Alexander ,  Engeli, Roman

IPC分类号： B22F1/00

CPC分类号： B22F1/02 ,  B22F1/0003 ,  B22F1/0081 ,  B22F1/0088 ,  B22F3/1055 ,  B22F9/04 ,  B22F9/16 ,  B22F2003/1059 ,  B22F2302/10 ,  B22F2302/15 ,  B22F2302/20 ,  B22F2302/25 ,  B22F2302/30 ,  B22F2302/45 ,  B22F2998/10 ,  B22F2999/00 ,  B33Y10/00 ,  B33Y70/00 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/0676 ,  C23C14/08 ,  C23C16/308 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4417 ,  C23G5/00 ,  Y02P10/24 ,  Y02P10/295 ,  B22F9/082 ,  C23C14/00 ,  C23C16/00 ,  B22F2201/11 ,  B22F2009/0824

摘要： The present application refers to a method for treating a base material in form of metallic powder made of super alloys based on Ni, Co, Fe or combinations thereof, or made of TiAl alloys which treated powder is used for additive manufacturing, especially for Selective Laser Melting (SLM) of three-dimensional articles. The method is characterized in that
- in a first step the chemical composition of the base material is determined and compared to a calculated target chemical composition with detailed amount of each element of the powder, which is necessary for the following SLM manufacturing process,
- the powder is stored and atomized only under dry and pure protective shielding gas atmosphere and/or
- the powder is treated by a post gas phase treatment, thereby adding or removing specific elements into or from the powder particles and adjusting the content of the added or already existing specific elements to meet the calculated target amount of each element according to the first step.
It is an effective, simple and cost-efficient method for improvement of SLM powder manufacturing, powder post-processing and powder recycling.

摘要翻译： 本申请是指以基于Ni，Co，Fe或其组合的超合金制成的金属粉末的形式的基材的处理方法，或由该处理的粉末用于添加剂制造的TiAl合金制成的基材，特别是用于选择性激光 熔融（SLM）三维制品。 该方法的特征在于，在第一步骤中，确定基材的化学组成并将其与计算出的目标化学成分进行比较，其中粉末的每种元素的详细量是下列SLM制造过程所必需的， - 粉末仅在干燥和纯净的保护气体气氛下储存和雾化，和/或 - 通过后气相处理处理粉末，从而将特定元素加入或除去粉末颗粒，或调整添加的或已经 现有的具体元素，以满足根据第一步的每个元素的计算目标量。 改进SLM粉末制造，粉末后处理和粉末回收是一种有效，简单和经济有效的方法。

公开(公告)号：EP3150310A1

公开(公告)日：2017-04-05

申请号：EP15800683.3

申请日：2015-05-28

申请人： Mitsubishi Materials Corporation

发明人： TATSUOKA Sho ,  YAMAGUCHI Kenji

IPC分类号： B23B27/14

CPC分类号： C23C28/044 ,  B23B27/14 ,  B23B27/148 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/403 ,  C23C16/45523 ,  C23C28/042

摘要： The hard coating layer includes at least a complex nitride or complex carbonitride layer expressed by the composition formula (Ti 1-x Al x )(C y N 1-y ). The average Al content ratio x avg the average C content ratio y avg satisfy 0.60≤x avg ≤0.95 and 0≤y avg ≤0.005, respectively, each of the x avg and y avg is in atomic ratio. The crystal grains constituting the complex nitride or complex carbonitride layer include a crystal grain having the cubic structure. Predetermined average crystal grain misorientation and inclined angle distribution exist in the crystal grains having the cubic structure.

摘要翻译： 硬涂层至少包括由组成式（Ti 1-x Al x）（C y N 1-y）表示的复合氮化物或复合碳氮化物层。 平均Al含量比x avg平均C含量比y avg分别满足0.60‰×平均‰‰0.95和0‰平均‰‰0.005，每个平均和平均值均为原子比。 构成复合氮化物或复合碳氮化物层的晶粒包括具有立方结构的晶粒。 在具有立方结构的晶粒中存在预定平均晶粒取向和倾斜角分布。

公开(公告)号：EP2970019A1

公开(公告)日：2016-01-20

申请号：EP14716671.4

申请日：2014-03-10

申请人： Rolls-Royce Corporation

发明人： LAZUR, Andrew, J. ,  CHAMBERLAIN, Adam, L.

IPC分类号： C04B35/573 ,  C04B35/628 ,  C04B35/80

CPC分类号： C04B35/806 ,  C04B35/573 ,  C04B35/6286 ,  C04B35/62863 ,  C04B35/62868 ,  C04B35/62873 ,  C04B35/62884 ,  C04B35/62894 ,  C04B35/62897 ,  C04B2235/3826 ,  C04B2235/421 ,  C04B2235/422 ,  C04B2235/5244 ,  C04B2235/5248 ,  C04B2235/614 ,  C04B2235/616 ,  C23C16/045 ,  C23C16/32 ,  C23C16/325 ,  C23C16/342

摘要： A method of producing a ceramic matrix composite component for use in a gas turbine engine comprising forming a ceramic matrix composite component, assembling the preform in a tool, loading the tool into a furnace and infiltrating the preform. Infiltrating the preform may include the methods of CVI, CVD, slurry infiltration, and melt infiltration.

摘要翻译： 陶瓷基复合材料和用于制备复合材料的方法是所述圆盘游离缺失。

公开(公告)号：EP2782886A1

公开(公告)日：2014-10-01

申请号：EP12795394.1

申请日：2012-11-23

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique

发明人： ALLEMAND, Alexandre ,  SZWEDEK, Olivier ,  EPHERRE, Jean-François ,  LE PETITCORPS, Yann

IPC分类号： C04B41/89 ,  C23C16/02 ,  C23C16/32

CPC分类号： C23C16/22 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2111/00982 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/06 ,  C23C16/32 ,  C23C16/325 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40 ,  C04B35/83 ,  C04B41/4535 ,  C04B41/5127 ,  C04B41/5144 ,  C04B41/5002 ,  C04B41/522 ,  C04B41/51 ,  C04B41/4531 ,  C04B41/4596 ,  C04B41/5059 ,  C04B41/5057

摘要： The invention relates to a method for coating, by means of a chemical vapor deposition (CVD) technique, a part with a coating (PAO) for protecting against oxidation. The method enables the preparation of a refractory coating for protecting against oxidation, having a three-dimensional microstructure, which ensures the protection against oxidation at a high temperature, generally at a temperature above 1200°C, for materials that are susceptible to oxidation, such as composite materials, and in particular carbon/carbon composite materials.

公开(公告)号：EP2604427A1

公开(公告)日：2013-06-19

申请号：EP11816435.9

申请日：2011-08-09

申请人： Asahi Glass Company, Limited

发明人： KIHARA, Naoto ,  NAKAO, Takuya

IPC分类号： B32B9/00 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  H01L31/042

CPC分类号： C23C16/44 ,  C23C16/308 ,  C23C16/32 ,  C23C16/325 ,  C23C16/34 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/403 ,  C23C16/545 ,  H01L31/0203 ,  H01L31/0481 ,  Y02E10/50 ,  Y10T428/3154

摘要： Provision of a laminate excellent in weather resistance and gas barrier property and also excellent in adhesion between layers and its durability; and a process for producing such a laminate.
A laminate which comprises a substrate sheet containing a fluororesin, and a gas barrier layer containing, as the main component, an inorganic compound composed of a metal and at least one member selected from the group consisting of oxygen, nitrogen and carbon, the gas barrier layer being directly laminated on at least one surface of the substrate sheet; wherein in a C1 s spectrum of a surface of the substrate sheet on which the gas barrier layer is laminated, that is measured by X-ray photoelectron spectroscopy, the position of the highest peak present within a binding energy range of from 289 to 291 eV is present within a range of from 290.1 to 290.6 eV.

公开(公告)号：EP2535343A3

公开(公告)日：2013-03-27

申请号：EP12169229.7

申请日：2012-05-24

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Xiao, Manchao ,  Lei, Xinjian ,  Han, Bing ,  O'Neill, Mark Leonard ,  Pearlstein, Ronald Martin ,  Ho, Richard ,  Chandra, Haripin ,  Derecskei-Kovacs, Agnes

IPC分类号： C07F7/02 ,  C23C16/36 ,  H01L21/02

CPC分类号： C23C16/24 ,  C07F7/025 ,  C07F7/10 ,  C23C16/308 ,  C23C16/32 ,  C23C16/345 ,  C23C16/347 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228

摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

公开(公告)号：EP2507405A1

公开(公告)日：2012-10-10

申请号：EP10796445.4

申请日：2010-11-19

申请人： Beneq OY

发明人： MAULA, Jarmo ,  PUTKONEN, Matti

IPC分类号： C23C16/455 ,  A44C17/00 ,  C04B41/50

CPC分类号： A44C17/007 ,  A44C17/00 ,  A44C27/006 ,  C04B41/009 ,  C04B41/4531 ,  C04B41/50 ,  C04B2111/82 ,  C23C16/18 ,  C23C16/32 ,  C23C16/40 ,  C23C16/45527 ,  Y10T428/31678 ,  C04B41/5061 ,  C04B41/5057 ,  C04B41/5105 ,  C04B41/5031 ,  C04B41/5041 ,  C04B14/00

摘要： A decorative coating and a method for forming a decorative coating on a gemstone to change the natural visual appearance of the gemstone. The decorative coating comprises an optically absorbing film. Depositing the absorbing film on the substrate comprises the alternating steps of introducing a first precursor to the reaction space such that at least a portion of the first precursor gets adsorbed onto the surface of the substrate, and subsequently purging the reaction space, and introducing a second precursor to the reaction space such that at least a portion of the second precursor reacts with the portion of the first precursor adsorbed onto the surface of the substrate to form a conformal absorbing film on the substrate comprising the gemstone, and subsequently purging the reaction space. The material of the absorbing film is selected from the group of oxides, carbides, noble metals or a mixture thereof.

公开(公告)号：EP2440686A1

公开(公告)日：2012-04-18

申请号：EP10786646.9

申请日：2010-06-07

申请人： Synos Technology, Inc.

发明人： LEE, Sang, In

IPC分类号： C23C16/50

CPC分类号： C23C16/45551 ,  C01B21/076 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

摘要： A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.