公开(公告)号：EP1610339A4

公开(公告)日：2007-03-28

申请号：EP04720246

申请日：2004-03-12

申请人： TDK CORP

发明人： EZAKI JOICHIRO ,  KAKINUMA YUJI ,  KOGA KEIJI ,  SUMITA SHIGEKAZU

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01L27/10

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/224 ,  H01L27/226

摘要： There are provided a magnetic memory device and a read method thereof capable of performing read operation with a low power consumption and a high read accuracy. Sense bit lines (21A, 21B) are arranged in the bit string direction for each pair of magnetoresistive elements (12A, 12B) constituting a single storage cell (12) and supply read current. The read current which has flown in the pair of magnetoresistive elements (12A, 12B) flows via a sense word line (31) to the ground. Furthermore, a constant current circuit (108B) is arranged commonly for a plurality of sense word lines (31) so as to stabilize the sum of the pair of read currents flowing in the pair of magnetoresistive elements (12A, 12B) of each storage cell (12) and read out information from the storage cell (12) according to a difference between the pair of the read currents. By sharing the constant current circuit (108B), it is possible to reduce the irregularities of the sum of the pair of read currents and reduce the power consumption.

公开(公告)号：EP1612865A4

公开(公告)日：2010-05-26

申请号：EP04720236

申请日：2004-03-12

申请人： TDK CORP

发明人： EZAKI JOICHIRO ,  KOGA KEIJI ,  KAKINUMA YUJI

IPC分类号： H01L27/22 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L43/08

CPC分类号： H01L27/222 ,  G11C11/15

公开(公告)号：EP1615269A4

公开(公告)日：2009-07-08

申请号：EP04723817

申请日：2004-03-26

申请人： TDK CORP

发明人： EZAKI JOICHIRO ,  KOGA KEIJI ,  KAKINUMA YUJI

IPC分类号： G11C11/15 ,  H01L27/10 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： H01L27/226 ,  H01L27/224 ,  H01L27/228

摘要： A magnetic memory device in which information is written stably by reducing the loss of the magnetic field induced by the current flowing through a write line, a magnetic memory cell incorporated in the magnetic memory device, and a method for easily manufacturing such a magnetic memory device are disclosed. The magnetic memory cell comprises multilayer bodies and an annular magnetic layer. Each multilayer body includes a magnetosensitive layer in which the direction of magnetization varies with the external magnetic field. In the multilayer body, current flows perpendicularly to the multilayer surface. The annular magnetic layer is disposed between a first multilayer body and a second multilayer body. The axis of the annular magnetic layer is parallel to the multilayer surface. Conductive wires are passed through the annular magnetic layer along the axis. Degradation of the strength of the reflux magnetic field generated in the annular magnetic layer can be suppressed. Consequently, the magnetization reversal of the magnetosensitive layers of the first and second multilayer bodies can be effected by a less write current.