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    MAGNETIC MEMORY CELL, MAGNETIC MEMORY DEVICE, AND MAGNETIC MEMORY DEVICE MANUFACTURING METHOD
    7.
    发明公开
    MAGNETIC MEMORY CELL, MAGNETIC MEMORY DEVICE, AND MAGNETIC MEMORY DEVICE MANUFACTURING METHOD 有权
    磁存储单元，磁性存储器模块及磁性记忆模块生产

    公开(公告)号：EP1615269A4

    公开(公告)日：2009-07-08

    申请号：EP04723817

    申请日：2004-03-26

    申请人： TDK CORP

    发明人： EZAKI JOICHIRO ,  KOGA KEIJI ,  KAKINUMA YUJI

    IPC分类号： G11C11/15 ,  H01L27/10 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

    CPC分类号： H01L27/226 ,  H01L27/224 ,  H01L27/228

    摘要： A magnetic memory device in which information is written stably by reducing the loss of the magnetic field induced by the current flowing through a write line, a magnetic memory cell incorporated in the magnetic memory device, and a method for easily manufacturing such a magnetic memory device are disclosed. The magnetic memory cell comprises multilayer bodies and an annular magnetic layer. Each multilayer body includes a magnetosensitive layer in which the direction of magnetization varies with the external magnetic field. In the multilayer body, current flows perpendicularly to the multilayer surface. The annular magnetic layer is disposed between a first multilayer body and a second multilayer body. The axis of the annular magnetic layer is parallel to the multilayer surface. Conductive wires are passed through the annular magnetic layer along the axis. Degradation of the strength of the reflux magnetic field generated in the annular magnetic layer can be suppressed. Consequently, the magnetization reversal of the magnetosensitive layers of the first and second multilayer bodies can be effected by a less write current.

    INTEGRIERTER SPEICHER MIT EINER ANORDNUNG VON NICHT-FLÜCHTIGEN SPEICHERZELLEN UND VERFAHREN ZUR HERSTELLUNG UND ZUM BETRIEB DES INTEGRIERTEN SPEICHERS
    8.
    发明授权
    INTEGRIERTER SPEICHER MIT EINER ANORDNUNG VON NICHT-FLÜCHTIGEN SPEICHERZELLEN UND VERFAHREN ZUR HERSTELLUNG UND ZUM BETRIEB DES INTEGRIERTEN SPEICHERS 有权
    具有非易失性存储器电池及其制造方法和操作集成内存组成的阵列集成的内存

    公开(公告)号：EP1340229B1

    公开(公告)日：2005-04-27

    申请号：EP01997811.3

    申请日：2001-10-29

    申请人： Infineon Technologies AG

    发明人： MÜLLER, Gerhard ,  SCHLÖSSER, Till

    IPC分类号： G11C5/00

    CPC分类号： H01L27/224 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/228

    摘要： An integrated memory with an arrangement of non-volatile ferromagnetic storage based memory cells, comprising high-power memory cells having a magnetoresisitive effect (1) with transistor control, and low-cost memory cells having a magnetoresistive effect (2) with memory elements (60) connected between the word lines (70) and bit lines (50). The memory elements (60) directly connected between a bit and a word line (60) are preferably used in the form of memory cell fields which can be superposed on top of the memory cells (1) with a transistor (9), resulting in a high integration density. Production costs are reduced significantly by producing the memory, which comprises two types of cells and meets all system requirements, in a single module and single operation cycle.

    Magnetoresistive data storage device
    9.
    发明公开
    Magnetoresistive data storage device 审中-公开
    Magnetoresitente数据存储装置

    公开(公告)号：EP1345232A3

    公开(公告)日：2004-07-28

    申请号：EP03251342.6

    申请日：2003-03-06

    申请人： Hewlett-Packard Company

    发明人： Tran, Lung The

    IPC分类号： G11C11/16 ,  G11C11/15

    CPC分类号： G11C11/16 ,  H01L27/224

    摘要： In a data storage device (10) having parallel memory planes each memory plane includes a first resistive cross point plane of memory cells (108a), a second resistive cross point plane of memory cells (108b), a plurality of conductive word lines (102) shared between the first and second planes of memory cells, a plurality of bit lines (104), each bit line coupling one or more cells from the first plane to another memory cell in the second plane, and a plurality of unidirectional elements (110). A first unidirectional element couples a first memory cell from the first plane to a selected word line and a selected bit line in a first conductive direction and a second unidirectional element couples a second cell from the second plane to the selected word line and selected bit line in a second conductive direction. The device further provides for a unidirectional conductive path to form from a memory cell in the first plane to a memory cell in the second plane sharing the same bit line.

    Diode for data storage device
    10.
    发明公开
    Diode for data storage device 审中-公开
    二极管存储器阵列

    公开(公告)号：EP1345230A3

    公开(公告)日：2004-07-07

    申请号：EP03251386.3

    申请日：2003-03-07

    申请人： Hewlett-Packard Company

    发明人： Sharma, Manish ,  Tran, Lung T.

    IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/00

    CPC分类号： H01L27/224 ,  G11C11/00 ,  G11C11/15 ,  G11C11/16

    摘要： In a data storage device that has a plurality of word lines (26, 28), a plurality of bit lines (20, 22, 24), and a resistive crosspoint array of memory cells (40-50), each memory cell is connected to a bit line and connected to an isolation diode (88) that further connects to a respective word line. The isolation diode (88) provides a unidirectional conductive path from the bit line to the word line. Each word line provides a common metal-semiconductor contact with each diode sharing the word line such that each diode has a separate metal contact located between the semiconductor portion of the common metal-semiconductor contact and its respective memory cell.