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公开(公告)号:EP0383389A1
公开(公告)日:1990-08-22
申请号:EP90200303.7
申请日:1990-02-08
IPC分类号: H01L31/0352 , H01L31/118 , G01T1/29
CPC分类号: H01L31/115 , G01T1/2928 , H01L31/03529 , H01L31/1185 , Y02E10/50
摘要: Position-sensitive radiation detector provided with a semiconductor structure comprising a wafer of semiconductor material of a first conductivity type having two principal-surfaces situated at relatively short distances from each other, the dimensions of which are sufficient to enclose the desired radiation detection surface. An electrode structure is formed on the wafer surfaces such that when suitable voltages are applied to said electrodes two drift fields are generated in the depleted body of the wafer. Detector/amplifier circuits are connected to selected electrodes of the electrode structure to emit, during operation, a start signal at the instant at which charge carriers are generted in the depleted part of the structure as a consequence of incident radiation or elementary particles, and a to emit a stop signal at the instant when charge carriers reach a detection electrode of the structure after propagation through both drift fields.
摘要翻译: 具有半导体结构的位置敏感型放射线检测器,该半导体结构包括第一导电类型的半导体材料晶片,其具有彼此相对短距离的两个主表面,其尺寸足以封闭所需的辐射检测表面。 在晶片表面上形成电极结构,使得当对所述电极施加合适的电压时,在晶片的耗尽体中产生两个漂移场。 检测器/放大器电路连接到电极结构的选定电极,以在操作期间发射作为入射辐射或基本粒子的结果的电荷载体在结构的耗尽部分产生的时刻的起始信号,以及 在载流子通过两个漂移场传播后到达结构的检测电极的瞬间发出停止信号。
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公开(公告)号:EP0383389B1
公开(公告)日:1994-05-11
申请号:EP90200303.7
申请日:1990-02-08
IPC分类号: H01L31/0352 , H01L31/118 , G01T1/29
CPC分类号: H01L31/115 , G01T1/2928 , H01L31/03529 , H01L31/1185 , Y02E10/50
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