公开(公告)号：EP0404306A3

公开(公告)日：1991-07-17

申请号：EP90304315.6

申请日：1990-04-23

申请人： TEKTRONIX INC.

发明人： Yang, Kei-Wean Calvin ,  Taggart, John Edwards

IPC分类号： H01L29/10 ,  H01L29/796 ,  H01L21/339

CPC分类号： H01L29/66954 ,  H01L29/1062 ,  H01L29/76841

摘要： The charge transfer efficiency of a two-phase charge-coupled device cell is enhanced by providing a three-tiered built-in potential in the channel of each cell. Two lower potential tiers form a trenched potential well in the cell for storing charge. A higher potential tier between the trenched potential well of a cell and the potential well of a preceding neighbor cell provides a poten­tial barrier preventing backflow of charge from well-to-well. The potential trench is located at the downstream end of the well adjacent a succeeding neighbor cell of the CCD.

公开(公告)号：EP0404306A2

公开(公告)日：1990-12-27

申请号：EP90304315.6

申请日：1990-04-23

申请人： TEKTRONIX INC.

发明人： Yang, Kei-Wean Calvin ,  Taggart, John Edwards

IPC分类号： H01L29/10 ,  H01L29/796 ,  H01L21/339

CPC分类号： H01L29/66954 ,  H01L29/1062 ,  H01L29/76841

摘要： The charge transfer efficiency of a two-phase charge-coupled device cell is enhanced by providing a three-tiered built-in potential in the channel of each cell. Two lower potential tiers form a trenched potential well in the cell for storing charge. A higher potential tier between the trenched potential well of a cell and the potential well of a preceding neighbor cell provides a poten­tial barrier preventing backflow of charge from well-to-well. The potential trench is located at the downstream end of the well adjacent a succeeding neighbor cell of the CCD.

摘要翻译： 通过在每个单元的通道中提供三层内置的电位来增强两相电荷耦合器件单元的电荷转移效率。 两个较低的潜在层在存储电荷的电池中形成沟槽势阱。 细胞的沟槽势阱与前一相邻细胞的潜在阱之间的较高的电位层提供了阻止电荷从井到阱的回流的潜在屏障。 潜在沟槽位于与CCD的后续相邻单元相邻的阱的下游端。