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    Process of depositing a TiN based film during the fabrication of a semiconductor device
    1.
    发明公开
    Process of depositing a TiN based film during the fabrication of a semiconductor device 失效
    在制造半导体器件期间沉积TiN基膜的过程

    公开(公告)号：EP0854505A2

    公开(公告)日：1998-07-22

    申请号：EP98100811.3

    申请日：1998-01-19

    申请人： Texas Instruments Incorporated

    发明人： Lu, Joing-Ping ,  Hwang, Ming-Jang

    IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L21/285

    CPC分类号： H01L21/76843 ,  C23C16/30 ,  C23C16/34 ,  C23C16/56 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/76856 ,  H01L27/1085 ,  H01L28/75 ,  H01L28/82 ,  H01L28/90

    摘要： An embodiment of the instant invention is a method of depositing a TiN-based film over a semiconductor wafer, the method comprising the steps of: substantially simultaneously subjecting the semiconductor wafer to TiCl 4 , H 2 , and N 2 ; and subjecting the semiconductor wafer to a plasma, such that the combination of the TiCl 4 , H 2 , and N 2 and the plasma cause the deposition of a TiN based film to form over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to SiH 4 so as to form a TiSi x N y film over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to B 2 H 6 so as to form a TiN x B y layer over the semiconductor wafer.

    摘要翻译： 本发明的一个实施例是一种在半导体晶片上沉积TiN基薄膜的方法，该方法包括以下步骤：基本上同时使半导体晶片经受TiCl4，H2和N2; 并且使半导体晶片经受等离子体，使得TiCl 4，H 2和N 2与等离子体的组合导致在半导体晶片上形成基于TiN的膜的沉积。 本发明的另一个实施例涉及另外对半导体晶片进行SiH4处理，以便在半导体晶片上形成TiSixNy膜。 本发明的另一个实施例涉及另外对半导体晶片进行B2H6处理，以在半导体晶片上形成TiNxBy层。

    Process of depositing a TiN based film during the fabrication of a semiconductor device
    2.
    发明公开
    Process of depositing a TiN based film during the fabrication of a semiconductor device 失效
    的半导体装置的制造过程中的TiN的基础上的层的沉积方法

    公开(公告)号：EP0854505A3

    公开(公告)日：1998-11-11

    申请号：EP98100811.3

    申请日：1998-01-19

    申请人： Texas Instruments Incorporated

    发明人： Lu, Joing-Ping ,  Hwang, Ming-Jang

    IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L21/285

    CPC分类号： H01L21/76843 ,  C23C16/30 ,  C23C16/34 ,  C23C16/56 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/76856 ,  H01L27/1085 ,  H01L28/75 ,  H01L28/82 ,  H01L28/90

    摘要： An embodiment of the instant invention is a method of depositing a TiN-based film over a semiconductor wafer, the method comprising the steps of: substantially simultaneously subjecting the semiconductor wafer to TiCl 4 , H 2 , and N 2 ; and subjecting the semiconductor wafer to a plasma, such that the combination of the TiCl 4 , H 2 , and N 2 and the plasma cause the deposition of a TiN based film to form over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to SiH 4 so as to form a TiSi x N y film over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to B 2 H 6 so as to form a TiN x B y layer over the semiconductor wafer.

    摘要翻译： 即时发明的实施方式是沉积在半导体晶片上的TiN基片（22,26）的方法，该方法包括以下步骤：基本上同时使所述半导体晶片以的TiCl 4，H 2和N 2; 以及使所述半导体晶片以形成等离子体，检查做了的TiCl 4，H 2和N 2等离子的组合引起的沉积的TiN膜为基础的（22,26）以在所述半导体晶片。 了本发明的另一实施例涉及另外使半导体晶片与SiH 4，从而形成了半导体晶片上一个的TiSi×N个y膜。 了本发明的另一实施例涉及另外使半导体晶片以B2H6，以便形成在半导体晶片在TiNxBy层。