专利检索 ap:("THE CARNEGIE INSTITUTION OF WASHINGTON") AND inv:"HEMLEY, Russell, J." 第 1 页

1.

发明公开
COLORLESS SINGLE-CRYSTAL CVD DIAMOND AT RAPID GROWTH RATE 审中-公开
标题翻译： WITH更快的生长速率无色单晶CVD金刚石

公开(公告)号：EP1907320A2

公开(公告)日：2008-04-09

申请号：EP06770854.5

申请日：2006-05-23

申请人： THE CARNEGIE INSTITUTION OF WASHINGTON

发明人： HEMLEY, Russell, J. , MAO, Ho-Kwang , YAN, Chih-Shiue

IPC分类号： C01B31/06

CPC分类号： C30B29/04 , C01B32/25 , C23C16/274 , C23C16/277 , C23C16/279 , C30B25/105

摘要： The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20 0C, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8 % to about 20 % CH4 per unit of H2 and from about 5 to about 25 % O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 μm/hour.