PRODUCTION OF A LAMPBRUSH CHROMOSOME
    2.
    发明授权
    PRODUCTION OF A LAMPBRUSH CHROMOSOME 有权
    制作lampbrush染色体

    公开(公告)号:EP0958383B1

    公开(公告)日:2003-09-17

    申请号:EP98960233.9

    申请日:1998-11-16

    IPC分类号: C12Q1/68

    摘要: A process for inducing a transcriptionally active chromosome (i.e., a 'lampbrush' chromosome) from condensed chromatin or nucleus is disclosed. The condensed chromosome is contacted with the contents of a germinal vesicle. Preferably, the nuclear envelope is disrupted or removed. Moreover, a heterologous system of chromosome and germinal vesicle derived from organisms of different species is preferred because it permits analysis of organisms that do not have lampbrush chromosomes or cannot be manipulated by other techniques. Such lampbrush chromosomes can be attached to a substrate, and then analyzed by a variety of molecular and cytological techniques such as, for example, antibody detection of chromosomal protein, autoradiography, electron and light microscopy, histochemistry, image analysis, immunofluorescence, in situ hybridization of nucleic acids, morphology, and the like.

    COLORLESS SINGLE-CRYSTAL CVD DIAMOND AT RAPID GROWTH RATE
    4.
    发明公开
    COLORLESS SINGLE-CRYSTAL CVD DIAMOND AT RAPID GROWTH RATE 审中-公开
    WITH更快的生长速率无色单晶CVD金刚石

    公开(公告)号:EP1907320A2

    公开(公告)日:2008-04-09

    申请号:EP06770854.5

    申请日:2006-05-23

    IPC分类号: C01B31/06

    摘要: The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20 0C, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8 % to about 20 % CH4 per unit of H2 and from about 5 to about 25 % O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 μm/hour.